EEWORLDEEWORLDEEWORLD

Part Number

Search

ER1D

Description
1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AA
Categorysemiconductor    Discrete semiconductor   
File Size272KB,2 Pages
ManufacturerSUNMATE
Websitehttp://www.sunmate.tw/
Download Datasheet Compare View All

ER1D Online Shopping

Suppliers Part Number Price MOQ In stock  
ER1D - - View Buy Now

ER1D Overview

1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AA

ER1A-ER1J
1.0A Surface Mount Rectifier
Features
·
Low cost
·
Low leakage
·
Low forward voltage drop
·
High current capability
·
Easily cleaned with alcohol,Isopropanol
and similar solvents
·
The plastic material carries U/L recognition 94V-0
B
Dim
SMA
Min
2.29
4.00
1.27
0.15
4.80
0.10
0.76
2.01
Max
2.92
4.60
1.63
0.31
5.59
0.20
1.52
2.62
A
C
A
B
C
D
E
G
H
J
Mechanical Data
·
Case:JEDEC DO-214AC,molded plastic
·
Terminals:
Solderable
per
MIL- STD-202,Method 208
·
Polarity: Color band denotes cathode
·
Weight: 0.002 ounces,0.064 grams
·
Mounting position: Any
D
J
H
G
E
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
@ T
A
= 25°C unless otherwise specified
ER1A
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
@T
A
=75
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
Maximum instantaneous forw ard voltage
@ 1.0A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=125
(Note 2)
(Note 3)
ER1B
100
70
100
ER1C
150
105
150
ER1D
200
140
200
1.0
ER1E
300
210
300
ER1G
400
280
400
ER1J UNITS
600
420
600
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
I
FSM
V
F
I
R
t
rr
C
J
R
θJA
T
J
T
STG
0.95
30.0
A
1.25
5.0
100
35
22
50
- 55 ----- + 150
- 55 ----- + 150
1.7
V
A
ns
pF
/W
Maximum reverse recovery time (Note 1)
Typical junction capacitance
Typical thermal resistance
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient.
1of2

ER1D Related Products

ER1D ER1A ER1B ER1J ER1C ER1E ER1G
Description 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AA 1 A, SILICON, SIGNAL DIODE, DO-214AA 1 A, SILICON, SIGNAL DIODE, DO-214AA 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214BA 1 A, SILICON, SIGNAL DIODE, DO-214AA 1 A, 300 V, SILICON, SIGNAL DIODE, DO-214AA 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AA

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1776  94  1220  2083  1569  36  2  25  42  32 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号