1N5407 datasheet, PDF - EEWORLD Datasheet

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1N5407: Description3 A, SILICON, RECTIFIER DIODE, DO-201AD; Categorysemiconductor Discrete semiconductor; File Size72KB，2 Pages; ManufacturerSUNMATE; Websitehttp://www.sunmate.tw/

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1N5407 Overview

3 A, SILICON, RECTIFIER DIODE, DO-201AD

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1N5400 – 1N5408

3.0A Axial Leaded Rectifier

Features

Diffused Junction

Low Forward Voltage Drop

High Current Capability

High Reliability

High Surge Current Capability

Mechanical Data

Case: Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

Weight: 1.2 grams (approx.)

Mounting Position: Any

Marking: Type Number

Epoxy: UL 94V-O rate flame retardant

DO-201AD

Dim

Min

Max

25.4

—

8.50

9.50

1.20

1.30

5.0

5.60

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

5400

=25°C unless otherwise specified

Characteristic

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

Average Rectified Output Current

(Note 1)

= 75°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

Forward Voltage

Peak Reverse Current

At Rated DC Blocking Voltage

= 3.0A

= 25°C

= 100°C

Symbol

RRM

RWM

R(RMS)

5401

100

5402

200

140

5404

400

280

3.0

5406

600

420

5407

800

560

5408

1000

700

Unit

FSM

STG

200

1.0

5.0

100

-65 to +125

-65 to +150

µA

K/W

°C

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance Junction to Ambient

(Note 1)

Operating Temperature Range

Storage Temperature Range

*Glass passivated forms are available upon request

Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case

2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.

1of2

1N5407 Related Products

	1N5407	1N5400	1N5401	1N5402	1N5404	1N5406
Description	3 A, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 600 V, SILICON, RECTIFIER DIODE
Number of terminals	-	2	2	2	2	2
Number of components	-	1	1	1	1	1
Processing package description	-	PLASTIC PACKAGE-2	PLASTIC PACKAGE-2	PLASTIC PACKAGE-2	GREEN, PLASTIC PACKAGE-2	LEAD FREE, PLASTIC, CASE 267-05, 2 PIN
state	-	ACTIVE	ACTIVE	DISCONTINUED	ACTIVE	DISCONTINUED
packaging shape	-	round	round	round	round	round
Package Size	-	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Terminal form	-	Wire	Wire	Wire	Wire	Wire
terminal coating	-	MATTE Tin	tin	tin lead	PURE Tin	MATTE Tin
Terminal location	-	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Packaging Materials	-	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy
structure	-	single	single	single	single	single
Shell connection	-	isolation	isolation	isolation	isolation	isolation
Diode component materials	-	silicon	silicon	silicon	silicon	silicon
Diode type	-	rectifier diode	rectifier diode	rectifier diode	rectifier diode	rectifier diode
application	-	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	EFFICIENCY	GENERAL PURPOSE
Phase	-	1	1	1	1	1
Maximum repetitive peak reverse voltage	-	50 V	100 V	200 V	400 V	600 V
Maximum average forward current	-	3 A	3 A	3 A	3 A	3 A
Maximum non-repetitive peak forward current	-	200 A	200 A	200 A	200 A	200 A

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