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1N5402

Description
3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size72KB,2 Pages
ManufacturerSUNMATE
Websitehttp://www.sunmate.tw/
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1N5402 Overview

3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD

1N5402 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPLASTIC PACKAGE-2
stateDISCONTINUED
packaging shaperound
Package SizeLONG FORM
Terminal formWire
terminal coatingtin lead
Terminal locationAXIAL
Packaging MaterialsPlastic/Epoxy
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typerectifier diode
applicationGENERAL PURPOSE
Phase1
Maximum repetitive peak reverse voltage200 V
Maximum average forward current3 A
Maximum non-repetitive peak forward current200 A
1N5400 – 1N5408
3.0A Axial Leaded Rectifier
Features
!
!
!
!
!
Diffused Junction
Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
A
B
A
Mechanical Data
!
!
!
!
!
!
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 1.2 grams (approx.)
Mounting Position: Any
Marking: Type Number
Epoxy: UL 94V-O rate flame retardant
D
DO-201AD
Dim
Min
Max
A
25.4
B
8.50
9.50
C
1.20
1.30
D
5.0
5.60
All Dimensions in mm
C
!
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
1N
5400
50
35
@T
A
=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@T
A
= 75°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
@I
F
= 3.0A
@T
A
= 25°C
@T
A
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
1N
5401
100
70
1N
5402
200
140
1N
5404
400
280
3.0
1N
5406
600
420
1N
5407
800
560
1N
5408
1000
700
Unit
V
V
A
I
FSM
V
FM
I
RM
C
j
R
JA
T
j
T
STG
200
1.0
5.0
100
50
18
-65 to +125
-65 to +150
A
V
µA
pF
K/W
°C
°C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Ambient
(Note 1)
Operating Temperature Range
Storage Temperature Range
*Glass passivated forms are available upon request
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.
1of2

1N5402 Related Products

1N5402 1N5400 1N5401 1N5404 1N5407 1N5406
Description 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 600 V, SILICON, RECTIFIER DIODE
Number of terminals 2 2 2 2 - 2
Number of components 1 1 1 1 - 1
Processing package description PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 GREEN, PLASTIC PACKAGE-2 - LEAD FREE, PLASTIC, CASE 267-05, 2 PIN
state DISCONTINUED ACTIVE ACTIVE ACTIVE - DISCONTINUED
packaging shape round round round round - round
Package Size LONG FORM LONG FORM LONG FORM LONG FORM - LONG FORM
Terminal form Wire Wire Wire Wire - Wire
terminal coating tin lead MATTE Tin tin PURE Tin - MATTE Tin
Terminal location AXIAL AXIAL AXIAL AXIAL - AXIAL
Packaging Materials Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy - Plastic/Epoxy
structure single single single single - single
Shell connection isolation isolation isolation isolation - isolation
Diode component materials silicon silicon silicon silicon - silicon
Diode type rectifier diode rectifier diode rectifier diode rectifier diode - rectifier diode
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE EFFICIENCY - GENERAL PURPOSE
Phase 1 1 1 1 - 1
Maximum repetitive peak reverse voltage 200 V 50 V 100 V 400 V - 600 V
Maximum average forward current 3 A 3 A 3 A 3 A - 3 A
Maximum non-repetitive peak forward current 200 A 200 A 200 A 200 A - 200 A
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