AWB31D7
AWB31D7 Data Sheet
1.2 GHz CATV Push-pull Amplifier MMIC
1. Product Overview
1.1
Features
5 ~ 1200 MHz Bandwidth
17.0 dB Gain at 500 MHz
CSO : 68 dBc, CTB : 67 dBc
@ Pout = 99 dBV flat for NTSC 79 channels + QAM256 75 channels, -6 dB offset
Robust under Hard Operating Conditions
+5 V, 220 mA Supply
1.2
Applications
CATV Line Amplifiers
HFC Nodes
Head End Equipment
1.3
Package Profile & RoHS Compliance
SOIC8, 6.0x4.8 mm
2
, surface mount
RoHS-compliant
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AWB31D7
2. Summary on Product Performances
2.1
Typical Performance
Typical
50
17.2
-20.0
-20.0
39
81
25
2.4
68
67
220
+5
500
17.0
-15.0
-14.0
42
62
26
2.2
1002
17.0
-18.0
-18.0
41
65
25
2.1
1200
17.1
-18.0
-15.0
37
50
25
2.2
Unit
MHz
dB
dB
dB
dBm
dBm
dBm
dB
dBc
dBc
mA
V
Supply voltage = +5 V, T
A
= +25
C,
Z
O
= 75
Parameter
Frequency
Gain
S11
S22
Output IP3
1)
Output IP2
1),2)
Output P1dB
Noise Figure
CSO
1)
CTB
1)
Current
Device Voltage
1) OIP3 and OIP2 are measured with two tones at an output power of +10 dBm/tone separated by 6 MHz.
2) OIP2 is measured at F1+F2 Frequency.
3) CSO & CTB measured at Pout = 99 dBV flat for NTSC 79 channels + QAM 256 75 channels, -6 dB offset.
2.2
Product Specification
Min
Typ
500
17.0
-15
-14
42
62
26
2.2
220
+5
Max
Unit
MHz
dB
dB
dB
dBm
dBm
dBm
dB
mA
V
Supply voltage = +5 V, T
A
= +25
C,
Z
O
= 75
Parameter
Frequency
Gain
S11
S22
Output IP3
1)
Output IP2
1),2)
Output P1dB
Noise Figure
Current
Device Voltage
1) OIP3 and OIP2 are measured with two tones at an output power of +10 dBm/tone separated by 6 MHz.
2) OIP2 is measured at F1+F2 Frequency.
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AWB31D7
2.3
Pin
1, 4
2
7
5, 8
3, 6
Pin Configuration
Description
RF_IN
Current Adjustable
V
CG
Adjustable
2
7
Bias
Circuit
3
6
1
8
Simplified Outline
RF_ OUT
NC or GND
4
5
Note: Backside metal paddle is RF and DC ground.
2.4
Absolute Maximum Ratings
Max. Ratings
-40 to
85 C
-40 to
150 C
+10 V
450 mA
+160
C
+25 dBm
Parameters
Operation Case Temperature
Storage Temperature
Device Voltage
Maximum Current
Operation Junction Temperature
Input RF Power (CW, 75
matched)
2.5
Symbol
R
th
Thermal Resistance
Description
Thermal resistance from junction to lead
Typ
17
Unit
C/W
2.6
HBM
MM
ESD Classification & Moisture Sensitivity Level
ESD Classification
Class 1B
Class A
Voltage Level: 750 V
Voltage Level: 100 V
CAUTION: Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control techniques should be used when handling
these devices.
Moisture Sensitivity Level
MSL 3 at 260
C
reflow
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AWB31D7
3. Application: 50 ~ 1200 MHz (75
Push-pull,
V
supply
= +5 V)
3.1
Application Circuit & Evaluation Board
Vdevice = +5 V
C4
C5
T1(MABA-007159) C1
RF IN
L2
R1
AWB31D7
C3
L1
L3
C13
L6
C6
C2
T2(MABA-007159)
RF OUT
R3
C7
C11
L5
R2
R4
C8
C12
C9
L4
C10
Vdevice = +5 V
PCB Information
Material
Thickness (mm)
Size (mm)
EB No.
FR4
0.8
40x40
EB-S8-H2
Bill of Material
Symbol
AWB31D7
C1, C2, C7, C8
C3, C9
C4, C10
C5, C11, C13
C6, C12
L1, L4
L2, L5
L3, L6
R1, R2
R3
R4
T1, T2
Value
-
1
F
1
F
10
F
0.5 pF
1.2 pF
1
H
1.8 nH
2.7 nH
360
39
1.1 k
1:1
Size
-
0603
0603
0805
0603
0603
1206
0603
0603
0603
0402
0402
-
Description
MMIC Amplifier
DC blocking capacitor
Feedback capacitor
Decoupling capacitor
Matching capacitor
Matching capacitor
RF choke inductor
Matching inductor
Matching inductor
Feedback resistor
Current adjust resistor
V
CG
adjust resistor
Transformer balun
Manufacturer
ASB
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Samsung
Samsung
Samsung
MACOM
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October 2014
AWB31D7
3.2
Performance Table
Typical
50
17.2
-20.0
-20.0
39
81
25
2.4
68
67
220
+5
500
17.0
-15.0
-14.0
42
62
26
2.2
1002
17.0
-18.0
-18.0
41
65
25
2.1
1200
17.1
-18.0
-15.0
37
50
25
2.2
Unit
MHz
dB
dB
dB
dBm
dBm
dBm
dB
dBc
dBc
mA
V
Supply voltage = +5 V, T
A
= +25
C,
Z
O
= 75
Parameter
Frequency
Gain
S11
S22
Output IP3
1)
Output IP2
1),2)
Output P1dB
Noise Figure
CSO
1)
CTB
1)
Current
Device Voltage
1) OIP3 and OIP2 are measured with two tones at an output power of +10 dBm/tone separated by 6 MHz.
2) OIP2 is measured at F1+F2 Frequency.
3) CSO & CTB measured at Pout = 99 dBV flat for NTSC 79 channels + QAM 256 75 channels, -6 dB offset.
3.3
Plot of S-parameter & Stability Factor
40
30
20
10
0
-10
-20
-30
-40
-50
-60
0
200
400
600
800
Frequency (MHz)
1000
S12
S11
K
S22
S21
10
9
7
6
5
4
3
2
1
0
1200
8
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Stability Factor, K
S-parameter (dB)