DATA SHEET
SEMICONDUCTOR
SB1020FCT~SB10200FCT
ITO-220AB
Unit:inch(mm)
.189(4.8)
.165(4.2)
.130(3.3)
MAX.
.272(6.9)
.248(6.3)
10A SCHOTTKY BARRIER RECTIFIER
FEATURES
•
Schottky Barrier Chip
•Guard
Ring for Transient Protection
•High
Current Capability, Low Forward
•High
Surge Current Capability
•Plastic
Material has UL Flammability
Classification 94V-O
•
High temperature soldering : 260
O
C / 10 seconds at terminals
•
Pb free product at available : 99% Sn above meet RoHS
environment substance directive request
.071(1.80)
MAX.
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.138(3.50)
.100(2.55)
.406(10.3)
MAX.
.137(3.5)
.118(3.0)
.161(4.1)
MAX.
.59(15.00)
.50(12.70)
.606(15.4)
.583(14.8)
•Low
Reverse Leakage Current
.032(0.8)
MAX.
MECHANICAL DATA
•Case:
ITO-220AB
Molded Plastic
•Terminals:
Plated Leads Solderable per
MIL-STD-750, Method 2026
Polarity: As Marked on Body
Mounting Position: Any
Marking: Type Number
.1(2.55)
.1(2.55)
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
SB
1020FCT
SB
1030FCT
SB
SB
SB
SB
SB
SB
SB
10200FCT
Units
1040FCT 1050FCT 1060FCT 1080FCT 10100FCT 10150FCT
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @TC =
95°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave
superimposed on rated load (JEDEC
Method)
Forward Voltage @IF = 5.0A
Peak Reverse Current @TA = 25°C
At Rated DC Blocking Voltage @TA = 100°C
Typical Junction Capacitance (Note 1)
Operating and Storage Temperature Range
V
RRM
V
RWM
V
R
V
R(RMS)
I
F
14
21
28
35
42
10
56
70
105
140
Volts
Amp
20
30
40
50
60
80
100
150
200
Volts
IFSM
150
120
Amps
V
F
I
RM
C
j
T
j
, T
STG
0.55
0.5
50
0.75
0.85
0.90
0.1
7
0.95
Volts
mA
pF
℃
700
-55 to +150
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
http://www.yeashin.com
1
REV.03 20140325
DEVICE CHARACTERISTICS
SB1020FCT~SB10200FCT
INSTANTANEOUS FORWARD CURRENT
AMPERES
40
50,60V
20,30,40V
10
8
6
4
2
1.0
.8
.6
.4
.2
.1
80,100V
150V
200V
AVERAGE FORWARD CURRENT
10.0
0
0
O
T
J
= 25
O
C
Pulse Width = 300
m
s
1% Duty Cycle
95
CASE TEMPERATURE,
O
C
150
.4
.5
.6
.7
.8
.9
1.0
1.1
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
Fig.1- FORWARD CURRENT DERATING CURVE
INSTANTANEOUS REVERSE CURRENT, MILAMPERES
Fig.2- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTIC
100
T
C
= 100
O
C
150
PEAK FORWARD SURGE CURRENT,
10
120
110
90
70
50
30
20
10
1
20V-100V
8.3ms Single
Half Since-Wave
JEDEC Method
T
C
= 75
O
C
1.0
150-200V
T
C
= 25 C
O
0.1
0.01
0
100
200
300
PERCENT OF PEAK REVERSE VOLTAGE
2
5
10
20
50
100
NO. OF CYCLE AT 60HZ
Fig.3- TYPICAL REVERSE CHARACTERISTIC
Fig.4- MAXIMUM NON-REPETITIVE SURGE CURRENT
900
800
CAPACITANCE, pF
700
600
500
400
0
1
2
5
10
20
T
J
= 25
O
C
50 100 200
500
REVERSE VOLTAGE, VOLTS
Fig.5- TYPICAL JUNCTION CAPACITANCE
http://www.yeashin.com
2
REV.03 20140325
YEASHIN
亞 昕 科 技 股 ½ 有 限 公 司
TECHNOLOGY CO., LTD.
Marking Information
□
XXXX
SB 1 0xxFCT
Line 1: YS Logo and Date code
The first half of Line 1: YS logo
The second half of Line 1:
YYWW:
Year,
YYWW: Week.
Line 2 : Device name and Package type
SB
:
Schottky Barrier Rectifier
10xx:
10 Ampere Series product.
10xx: The peak reverse Voltage of product.
Line 3 : Device Structure symbol
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