SMD Type
Rectifier Diodes
US3A ~ US3M
DO-214AB(SMC)
7.112
6.604
Diodes
Unit: mm
6.18
5.98
■
Features
●
For surface mount applications
●
Low profile package
●
Easy pick and place
●
Ultrafast recovery times for high efficiency
●
Low forward voltage,low power loss
●
Plastic package has underwriters laboratories
flammability classification 94V-0
3.250
2.743
2
1
6.223
5.588
3.27
3.07
8.128
7.747
4.69
4.49
7.67
7.47
Recommended
Land Pattern
2.616
2.007
1.524
0.762
0.203
0.051
0.305
0.152
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Repetitive Peak Reverse Voltage
RMS Voltage
Maximum DC Blocking Voltage
Forward Voltage@ T
J
=25℃ I
FM
=3A
Averaged Forward Current.@ T
L
=110℃
Peak Forward Surge Current @ 8.3ms
Maximum DC Reverse Current Ta=25℃
Ta=125℃
Maximum Reverse Current
(Note.1)
Typical Junction Capacitance (Note.2)
Thermal Resistance.Junction- to-Ambient
Junction Temperature
Storage Temperature
Note.1: I
F
=0.5A, I
R
=1.0A,Irr=0.25A
Note.2: Measured at 1.0MHz, V
R
=4.0V
Symbol
V
RRM
V
RMS
V
DC
V
F
I
FAV
I
FSM
I
R
trr
Cj
R
thJA
Tj
Tstg
50
70
25
150
-55 to 150
US3A US3B US3D US3G US3J US3K US3M
50
35
50
100
70
100
1
3
100
10
500
75
50
200
140
200
400
280
400
600
420
600
800
560
800
1.7
A
μA
ns
pF
℃/W
℃
1000
700
1000
V
Unit
■
Marking
NO.
Marking
US3A
US3A
US3B
US3B
US3D
US3D
US3G
US3G
US3J
US3J
US3K
US3K
US3M
US3M
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1
SMD Type
Rectifier Diodes
US3A ~ US3M
■
Typical Characterisitics
FIG.1 -- FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD RECTIFIED
CURRENT,AMPERES
3 .0
2 .5
2 .0
R E S IS T IV E O R IN D U C T IV E
LOAD
Diodes
FIG.2 -- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
100
PEAK FORWARD SURGE
CURRENT,AMPERES
90
80
70
60
50
40
30
20
10
0
1
TL=110℃
8.3ms SINGLE HALF SINE-WAVE
(JEDEC METHOD)
1 .5
1 .0
0 .5
0 .2 X 0 .2 "(5 .0 X 5 .0 m m )
COPPER PAD
AREAS
0
0
25
50
75
100
125
150
10
100
LEAD TEMPERATURE
℃
FIG.3 -- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
IF-INSTANTANEOUS FORWARD
CURRENT,AMPERES
US3A-US3G
1
US3J-US3M
NUMBER OF CYCLES AT 60HZ
FIG.4 -- TYPICAL REVERSE CHARACTERISTICS
IR-INSTANTANEOUS REVERSE
LEAKAGE CURRENT(mA)
100
T
J
=125℃
10
10
1
25℃
1
00℃
0.1
1
2
5℃
0.01
PULSE WIDTH=300u
s1%DUTY CYCLE T
J
=25
0.8 1.0
1.2
1.4
1.6
0.1
0.001
0.4
0.6
1.8
0.01
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE(V)
FIG.5 -- TYPICAL JUNCTION CAPACITANCE
200
100
60
40
20
10
6
4
T
J
=25
US3K,US3M
US3A-US3J
PERCENT OF RATED PEAK REVERSE VOLTAGE.(
％
)
FIG.6 -- TYPICAL TRANSIENT THERMAL IMPEDANCE
TRANSIENT THERMAL IMPEDANCE
(
O
C/W)
100
PF-JUNCTION CAPACITANCE(pF)
10
1
2
1
0.1 0.2
0.4
1
2
4
10
20
40
100
0.1
0.01
0.1
1
10
100
REVERSE VOLTAGE(V)
T,PULSE DURATION,
2
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