BCP156
Elektronische Bauelemente
NPN Silicon
Planar
High Performance
Transistor
RoHS Compliant Product
Description
The BCP156 is designed for general purpose
switching and amplifier applications.
SOT-89
Features
* 3 Amp Continuous Current
* 60 Volt V
CEO
* Low Saturation Voltage
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5 q TYP.
0.70 REF.
Absolute Maximum Ratings at T
A
=25 C
Symbol
V
CBO
V
CEO
V
EBO
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Total Power Dissipation
Junction and Storage Temperature
o
o
Parameter
Value
80
60
5
3
6
1.2
-55~+150
Units
V
V
V
A
W
O
I
C
P
D
T
J,
T
stg
C
ELECTRICAL CHARACTERISTICS Tamb=25
C
unless otherwise specified
Typ.
Symbol
Min
Collector-Base Breakdown Voltage
80
BV
CBO
-
-
*BV
CEO
Collector-Emitter Breakdown Voltage
60
-
BV
EBO
Emitter-Base Breakdown Voltage
5
-
-
Collector-Base Cutoff Current
I
CBO
-
Emitter-Base Cutoff Current
-
I
EBO
*V
CE
(sat)1
-
0.12
Collector Saturation Voltage
*V
CE
(sat)2
-
0.43
-
*V
BE
(sat)
0.9
Base-Emitter Saturation Voltage
-
*V
BE
(on)
0.8
*h
FE1
70
200
*h
FE2
100
200
DC Current Gain
*h
FE3
80
170
80
40
*h
FE4
Gain-Bandwidth Product
175
fT
140
-
Output Capacitance
-
C
ob
Time-On
-
45
ton
-
Time-Off
toff
800
* Measured under pulse condition. Pulse width
≦
300
µ
s, Duty Cycle
≦
2%
Parameter
Spice parameter data is available upon request for this device.
http://www.SeCoSGmbH.com
Max
-
-
-
100
100
0.3
0.6
1.25
1
-
300
-
-
-
30
-
-
Unit
V
V
V
nA
nA
V
V
V
V
Test Conditions
I
C
=100
µA,I
E
=0
I
C
=10mA,I
B
=0
I
E
=100µA,I
C
=0
V
CB
= 60V,I
E
=0
V
EB
=4V,I
C
=0
I
C
=1A,I
B
=0.1A
I
C
=3A,I
B
=0.3A
I
C
=1A,I
B
=0.1A
I
C
=1A,V
CE
=2V
V
CE
= 2 V, I
C
=50mA
V
CE
= 2 V, I
C
=500mA
V
CE
= 2 V, I
C
=1A
V
CE
= 2 V, I
C
=2 A
V
CE
= 5 V, I
C
=100m A,f=100MHz
V
CB
=10V , f=1MHz
V
CC
= 10V,I
C
=500mA,I
B1
=I
B2
=50mA
MH z
pF
ns
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
BCP156
Elektronische Bauelemente
NPN Silicon
Planar
High Performance
Transistor
Characteristics Curve
Collector Current (A)
Collector Current (A)
Collector Current (A)
Collector Current (A)
Collector Emitter Voltage (V)
Collector Current (A)
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 2