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D1F60

Description
0.75 A, 600 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size722KB,2 Pages
ManufacturerKEXIN
Websitehttp://www.kexin.com.cn/html/index.htm
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D1F60 Overview

0.75 A, 600 V, SILICON, SIGNAL DIODE

SMD Type
Rectifiers Diodes
D1F60
Diodes
Features
High reliability with superior moisture resistance
Applicable to Automatic Insertion
2.126
1.397
2
1
Unit: mm
4.597
3.988
4.32
4.12
2.896 2.22
2.489 2.02
5.668
4.925
2.75
2.55
5.87
5.67
Recommended
Land Pattern
2.438
1.981
1.524
0.762
0.203
0.051
0.305
0.152
Absolute Maximum Ratings Ta = 25℃
Parameter
Reverse voltage
Forward current *1
Forward current *2
Peak forward surge current
Thermal Resistance Junction to Ambient *3
Thermal Resistance Junction to Ambient *4
Thermal Resistance Junction to Case
Junction Temperature
Storage temperature range
Symbol
V
RM
I
F
I
FM
R
θJA
R
θJC
T
J
T
stg
Rating
600
1
0.75
25
108
157
23
150
-55 to 150
℃/W
A
Unit
V
*1. 50Hz sine WAVE,R-load,On alumina substrate TA=25℃
*2. 50Hz sine WAVE,R-load,On glass-epoxy substrate TA=25℃
*3. On alumina substrate
*4. On glass-epoxy substrate
Electrical Characteristics Ta = 25℃
Parameter
Reverse breakdown voltage
Forward voltage
Reverse voltage leakage current
Symbol Test Conditions
V
R
V
F1
I
R1
I
R
= 100 uA
I
F
= 1 A
V
R
=600 V
Min
600
1.1
10
Typ
Max
Unit
V
uA
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