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DF08S

Description
1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size759KB,2 Pages
ManufacturerKEXIN
Websitehttp://www.kexin.com.cn/html/index.htm
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DF08S Overview

1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

DF08S Parametric

Parameter NameAttribute value
Number of terminals4
Number of components4
Maximum average input current1 A
stateDISCONTINUED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingNOT SPECIFIED
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structureBridge, 4 ELEMENTS
Diode component materialssilicon
Diode typebridge rectifier diode
Phase1
Maximum repetitive peak reverse voltage800 V
Maximum non-repetitive peak forward current50 A
SMD Type
Bridge Rectifiers
DF005S ~ DF10S
(KF005S ~ KF10S)
0.205
(
5.2
)
0.195
(
5.0
)
Diodes
DF-S
+
0.404
(
10.3
)
0.386
(
9.80
)
0.255
(
6.5
)
0.245
(
6.2
)
Features
Surge overload rating: 50 amperes peak.
Glass passivated junction.
Low leakage.
-
-
0.047
(
1.20
)
0.040
(
1.02
)
0.335
(
8.51
)
0.320
(
8.13
)
-
45
O
0.060
(
1.524
)
0.040
(
1.016
)
0.013
(
0.330
)
0.003
(
0.076
)
0.013
(
0.330
)
0.009
(
0.241
)
.135
(
3.4
)
.115
(
2.9
)
Dimensions in inches and
(millimeters)
Absolute Maximum Ratings Ta = 25℃
Parameter
Repetitive Peak Reverse Voltage
RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Forward Voltage, Per Element @ 1.0A
Averaged Forward Current.Ta=40℃
Peak Forward Surge Current
Reverse voltage leakage current
Ta = 125℃
Power Dissipation
Thermal Resistance, Junction to Ambient
I
2
t Rating for Fusing t < 8.35ms
Total Capacitance, per leg V
R
= 4.0V,
f = 1.0MHz
Junction Temperature
Storage Temperature
C
T
Tj
Tstg
Symbol
V
RRM
V
RMS
V
DC
V
F
I
FAV
I
FSM
I
R
P
D
R
θJA
DF
005S
50
35
50
DF
01S
100
70
100
DF
02S
200
140
200
DF
04S
400
280
400
1.1
1.5
50
5
500
3.1
40
10
25
150
-55 to 150
A
uA
W
°C/W
A
2
s
pF
DF
06S
600
420
600
DF
08S
800
560
800
DF
10S
1000
700
1000
V
Unit
www.kexin.com.cn
1

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