Preliminary
Datasheet
BCR16FM-14LB
700V - 16A - Triac
Medium Power Use
Features
•
•
•
•
I
T (RMS)
: 16A
V
DRM
: 800 V (Tj=125 °C)
Tj: 150 °C
I
FGTI
, I
RGTI
, I
RGT III
: 30 mA(20mA)
Note5
•
Insulated Type
•
Planar Passivation Type
•
Viso:2000V
R07DS1189EJ0200
Rev.2.00
Aug 22, 2014
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
2
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
3
1
1
2 3
Applications
Switching mode power supply, washing machine, motor control, heater control, and other general purpose control
applications.
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state voltage
Note1
Symbol
V
DRM
V
DSM
Voltage class
14
800
700
840
Unit
V
V
V
Condition
Tj = 125°C
Tj = 150°C
R07DS1189EJ0200 Rev.2.00
Aug 22, 2014
Page 1 of 7
BCR16FM-14LB
Parameter
RMS on-state current
Symbol
I
T (RMS)
Ratings
16
Unit
A
Preliminary
Conditions
Commercial frequency, sine full wave
360°conduction
Tc = 98°C (#BB0, See Ordering Info.)
87°C (#FA0, See Ordering Info.)
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Surge on-state current
I
2
t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage
Note6
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
Tj
Tstg
—
Viso
160
106.5
5
0.5
10
2
–40 to +150
–40 to +150
1.9
2000
A
A
2
s
W
W
V
A
°C
°C
g
V
Typical value
Ta=25°C, AC 1 minute
T
1
• T
2
• G terminal to case
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
Ι
ΙΙ
ΙΙΙ
Ι
ΙΙ
ΙΙΙ
Symbol
I
DRM
V
TM
V
FGT
Ι
V
RGT
Ι
V
RGT
ΙΙΙ
I
FGT
Ι
I
RGT
Ι
I
RGT
ΙΙΙ
V
GD
R
th (j-c)
Rated value
Min.
Typ.
Max.
—
—
2.0
—
—
1.5
—
—
—
—
—
—
0.2
0.1
—
—
Critical-rate of rise of off-state
Note4
commutation voltage
(dv/dt)c
10
1
—
—
—
—
—
—
—
—
—
—
—
—
1.5
1.5
1.5
30
Note5
30
Note5
30
Note5
—
—
2.9
3.5
—
—
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/W
°C/W
V/μs
Test conditions
Tj = 150°C, V
DRM
applied
Tc = 25°C, I
TM
= 25A,
instantaneous measurement
Tj = 25°C, V
D
= 6 V, R
L
= 6
Ω,
R
G
= 330
Ω
Tj = 25°C, V
D
= 6 V, R
L
= 6
Ω,
R
G
= 330
Ω
Tj = 125°C, V
D
= 1/2 V
DRM
Tj = 150°C, V
D
= 1/2 V
DRM
Junction to case
#BB0 (See Ordering Info.)
Note3
Junction to case
#FA0 (See Ordering Info.)
Tj = 125°C
Tj = 150°C
Note3
Gate trigger curent
Note2
Gate non-trigger voltage
Thermal resistance
Notes: 1. Gate open.
2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact themal resistance R
th (c-f)
in case of greasing is 0.5°C /W.
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
5. High sensitivity (I
GT
≤20mA)
is also available.(I
GT
item:1)
6. Make sure that your finished product containing this device meets your safe isolation requirements.
For safety, it's advisable that heatsink is electrically floating.
Commutating voltage and current waveforms
(inductive load)
Supply
Voltage
Time
(di/dt)c
Time
Time
V
D
Test conditions
1. Junction temperature
Tj = 125/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = –8.0A/ms
3. Peak off-state voltage
V
D
= 400 V
Main Current
Main Voltage
(dv/dt)c
R07DS1189EJ0200 Rev.2.00
Aug 22, 2014
Page 2 of 7
BCR16FM-14LB
Preliminary
Performance Curves
Maximum On-State Characteristics
10
2
7
5
100
Rated Surge On-State Current
Surge On-State Current (A)
90
80
70
60
50
40
30
20
10
0
0
10
2 3
5 7 10
1
2 3
5 7 10
2
On-State Current (A)
3
2
10
1
7
5
3
2
Tj = 150°C
10
7
5
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
Tj = 25°C
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current (Tj = t°C)
×
100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics (I, II and III)
3
2
V
GM
= 10V
Gate Trigger Current vs.
Junction Temperature
10
7
5
3
2
I
RGT III
3
Gate Voltage (V)
10
7
5
3
V
GT
= 1.5V
2
10
0
7
5
3
2
1
P
G(AV)
= 0.5W
P
GM
= 5W
I
GM
= 2A
Typical Example
10
2
I
,I
7
FGT I RGT I
5
3
2
10
–60 –40–20 0 20 40 60 80 100 120 140 160
1
10
–1
7
I
FGT I
I
RGT I
, I
RGT III
V
GD
= 0.1V
5
1
2
3
4
10 2 3 5 710 2 3 5 710 2 3 5 710
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
×
100 (%)
Gate Trigger Voltage (Tj = 25°C)
Gate Trigger Voltage vs.
Junction Temperature
10
7
5
3
2
10
2
7
5
3
2
10
–60 –40–20 0 20 40 60 80 100 120 140 160
1
3
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Transient Thermal Impedance (°C/W)
10
2
2 3 5 7 10
3
2 3
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
Typical Example
#FA0
#FA0
#BB0
#BB0
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
R07DS1189EJ0200 Rev.2.00
Aug 22, 2014
Page 3 of 7
BCR16FM-14LB
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Transient Thermal Impedance (°C/W)
10
7
5
3
2
2
10
7
5
3
2
1
10
7
5
3
2
0
10
7
5
3
2
–1
10
1
3
Preliminary
Maximum On-State Power Dissipation
40
On-State Power Dissipation (W)
5
No Fins
35
30
360° Conduction
Resistive,
25
inductive loads
20
15
10
5
0
0
2
4
6
8 10 12 14 16 18 20
10 2 3 5 710 2 3 5 710 2 3 5 710 2 3 5 710
2
3
4
Conduction Time (Cycles at 60Hz)
RMS On-State Current (A)
Allowable Case Temperature vs.
RMS On-State Current
160
Allowable Ambient Temperature vs.
RMS On-State Current
160
Ambient Temperature (°C)
140
Case Temperature (°C)
#BB0
#FA0
140
120
100
80
All fins are black painted
aluminum and greased
#BB0
#FA0
100
×
100
×
t2.3
120
100
80
60
40
Curves apply regardless
of conduction angle
60
×
60
×
t2.3
360° Conduction
20
Resistive,
inductive loads
0
0 2 4 6 8 10 12 14 16 18 20
60
Curves apply
regardless of
40
conduction angle
Resistive,
20
inductive loads
Natural convection
0
0 2 4 6 8 10 12 14 16 18 20
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = t°C)
×
100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Allowable Ambient Temperature vs.
RMS On-State Current
160
Repetitive Peak Off-State Current vs.
Junction Temperature
5
3
Typical Example
2
10
5
7
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
–60 –40 –20 0 20 40 60 80 100 120 140160
Ambient Temperature (°C)
140
120
100
80
60
40
20
0
0
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS On-State Current (A)
Junction Temperature (°C)
R07DS1189EJ0200 Rev.2.00
Aug 22, 2014
Page 4 of 7
BCR16FM-14LB
Holding Current vs.
Junction Temperature
Holding Current (Tj = t°C)
×
100 (%)
Holding Current (Tj = 25°C)
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
–60 –40 –20 0 20 40 60 80 100 120 140 160
Preliminary
Latching Current vs.
Junction Temperature
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
–40
Typical Example
Distribution
Latching Current (mA)
T
2
+, G–
Typical Example
T
2
+, G+
Typical Example
T
2
–, G–
0
40
80
120
160
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage (dv/dt = xV/μs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage (Tj = t°C)
×
100 (%)
Breakover Voltage (Tj = 25°C)
160
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
160
140
120
100
80
60
40
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120 140 160
Typical Example
Tj = 125°C
III Quadrant
I Quadrant
20
0
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/μs)
Breakover Voltage (dv/dt = xV/μs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
140
120
100
80
60
40
20
0
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
Commutation Characteristics (Tj=125°C)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
10
2
7
5
3
2
10
1
7
5
3
2
I Quadrant
Time
Main Voltage
(dv/dt)c
V
D
Main Current
(di/dt)c
I
T
τ
Time
Typical Example
Tj = 150°C
Typical Example
Tj = 125°C
I
T
= 4A
τ
= 500μs
V
D
= 200V
f = 3Hz
III Quadrant
Minimum
Characteristics
Value
III Quadrant
I Quadrant
10
0
7
3
5 7 10
1
2 3
5 7 10
2
2 3
Rate of Rise of Off-State Voltage (V/μs)
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS1189EJ0200 Rev.2.00
Aug 22, 2014
Page 5 of 7
京公网安备 11010802033920号
EEWORLD
