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PA2763_15

Description
MOS FIELD EFFECT TRANSISTOR
File Size327KB,8 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet View All

PA2763_15 Overview

MOS FIELD EFFECT TRANSISTOR

Preliminary
Data Sheet
μ
PA2763
MOS FIELD EFFECT TRANSISTOR
Description
R07DS0003EJ0100
Rev.1.00
May 31, 2010
The
μ
PA2763 is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management
applications.
Features
Low on-state resistance
R
DS(on)1
= 23.0 mΩ MAX. (V
GS
= 10 V, I
D
= 21 A)
R
DS(on)2
= 28.0 mΩ MAX. (V
GS
= 8 V, I
D
= 21 A)
Low C
iss
2100 pF TYP.
Built-in gate protection diode
Thin type surface mount package with heat spreader (8-pin HVSON)
RoHS Compliant
Absolute Maximum Ratings (T
A
= 25°C)
Item
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
1
Total Power Dissipation
2
Total Power Dissipation (PW = 10 sec)
2
Total Power Dissipation (T
C
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
3
Single Avalanche Energy
3
Symbol
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
P
T3
T
ch
T
stg
I
AS
E
AS
Ratings
100
±20
±42
±84
1.5
4.6
83
150
-55 to + 150
24.7
61.0
Unit
V
V
A
A
W
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Ambient Thermal Resistance
2
Channel to Case (Drain) Thermal Resistance
R
th(ch-A)
R
th(ch-C)
83.3
1.5
°C/W
°C/W
Notes:
1. PW
10
μ
s, Duty Cycle
1%
2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
3. Starting T
ch
= 25°C, V
DD
= 50 V, R
G
= 25
Ω,
L = 100
μ
H, V
GS
= 20→0 V
R07DS0003EJ0100 Rev.1.00
May 31, 2010
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