Preliminary
Datasheet
BCR8PM-14LE
700V – 8A - Triac
Medium Power Use
Features
•
•
•
•
I
T (RMS)
: 8 A
V
DRM
: 700 V
I
FGTI
, I
RGTI
, I
RGTIII
: 30 mA
Viso : 1500 V
R07DS1241EJ0300
(Previous: REJ03G1260-0200)
Rev.3.00
Dec 24, 2014
•
Insulated Type
•
Planar Passivation Type
•
UL Applying
Outline
RENESAS Package code: PRSS0003AA-B
(Package name: TO-220F(2) )
2
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
3
1
1
2
3
Applications
Washing machine, inversion operation of capacitor motor, and other general controlling devices
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state voltage
Note1
Symbol
V
DRM
V
DSM
Voltage class
14
700
800
Unit
V
V
R07DS1241EJ0300 Rev.3.00
Dec 24, 2014
Page 1 of 7
BCR8PM-14LE
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Isolation voltage
Notes: 1. Gate open.
Symbol
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
Tj
Tstg
—
Viso
Ratings
8
80
26
5
0.5
10
2
– 40 to +125
– 40 to +125
2.0
1500
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
V
Conditions
Preliminary
Commercial frequency, sine full wave
360° conduction, Tc = 82°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
T
1
·T
2
·G terminal to case
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
Ι
ΙΙ
ΙΙΙ
Ι
ΙΙ
ΙΙΙ
Symbol
I
DRM
V
TM
V
FGTΙ
V
RGTΙ
V
RGTΙΙΙ
I
FGTΙ
I
RGTΙ
I
RGTΙΙΙ
V
GD
R
th (j-c)
(dv/dt)c
Min.
—
—
—
—
—
—
—
—
0.2
—
10
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.6
1.5
1.5
1.5
30
30
30
—
4.3
—
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/W
V/μs
Test conditions
Tj = 125°C, V
DRM
applied
Tc = 25°C, I
TM
= 12 A,
Instantaneous measurement
Tj = 25°C, V
D
= 6 V, R
L
= 6
Ω,
R
G
= 330
Ω
Tj = 25°C, V
D
= 6 V, R
L
= 6
Ω,
R
G
= 330
Ω
Tj = 125°C, V
D
= 1/2 V
DRM
Junction to case
Note3
Tj = 125°C
Gate trigger current
Note2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Note4
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance R
th (c-f)
in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
(di/dt)c
Time
Time
V
D
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 4.0 A/ms
3. Peak off-state voltage
V
D
= 400 V
Main Current
Main Voltage
(dv/dt)c
R07DS1241EJ0300 Rev.3.00
Dec 24, 2014
Page 2 of 7
BCR8PM-14LE
Preliminary
Performance Curves
Maximum On-State Characteristics
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
100
Rated Surge On-State Current
Surge On-State Current (A)
90
80
70
60
50
40
30
20
10
0
10
0
2 3
4 5 7
10
1
2 3
4 5 7
10
2
On-State Current (A)
Tj =
125°C
Tj =
25°C
On-State Voltage (V)
Conduction
Time
(Cycles at
60Hz)
Gate
Trigger
Current (Tj
=
t°C)
×
100 (%)
Gate
Trigger
Current (Tj
=
25°C)
Gate Characteristics (I,
II
and
III)
3
2
V
GM
=
10 V
Gate
Trigger
Current vs.
Junction Temperature
10
3
7
5
4
3
2
Gate Voltage (V)
10
1
7
5
3
2
10
0
7
5
3
2
P
G(AV)
=
0.5
W
P
GM
= 5 W
I
GM
=
2 A
Typical Example
I
RGT
III
V
GT
=
1.5 V
I
FGT I
I
RGT
I
, I
RGT
III
V
GD
=
0.2 V
10
–1
7
5
10
1
2 3
5 7
10
2
2 3
5 7
10
3
2 3
5 7
10
4
10
2
7
I
RGT
I
, I
FGT I
5
4
3
2
10
1
–60 –40 –20
0 20
40 60 80
100 120 140
Gate Current (mA)
Junction Temperature
(°C)
Gate
Trigger
Voltage (Tj
=
t°C)
×
100 (%)
Gate
Trigger
Voltage (Tj
=
25°C)
Gate
Trigger
Voltage vs.
Junction Temperature
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
–60 –40 –20
0 20
40 60 80
100 120 140
Maximum
Transient Thermal Impedance
Characteristics (Junction to case)
Transient Thermal Impedance
(°C/W)
10
2
2 3
5 710
3
2 3
5 7
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
–1
0
1
2
10 2 3
5 710
2 3
5 7
10 2 3
5 710
Typical Example
Junction Temperature
(°C)
Conduction
Time
(Cycles at
60 Hz)
R07DS1241EJ0300 Rev.3.00
Dec 24, 2014
Page 3 of 7
BCR8PM-14LE
Maximum
Transient Thermal Impedance
Characteristics (Junction to ambient)
Transient Thermal Impedance
(°C/W)
10
3
Preliminary
Maximum On-State Power Dissipation
16
On-State Power Dissipation (W)
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
No Fins
14
12
360° Conduction
Resistive,
10
inductive loads
8
6
4
2
0
0
2
4
6
8
10
12
14
16
10
2
10
1
10
0
10
–1
10
1
2 3
5 7
10
2
2 3
5 7
10
3
2 3
5 7
10
4
2 3
5 7
10
5
Conduction
Time
(Cycles at
60Hz)
RMS On-State Current (A)
Allowable Case
Temperature
vs.
RMS On-State Current
160
Curves apply regardless
140 of conduction angle
160
Allowable Ambient
Temperature
vs.
RMS On-State Current
All
fins
are
black
painted
140
aluminum and greased
120
×
120
×
t2.3
100
×
100
×
t2.3
60
×
60
×
t2.3
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
Natural
convection
0
2
4
6
8
10
12
14
16
120
100
80
60
360° Conduction
20 Resistive,
inductive loads
0
0
2
6
4
8
40
Ambient
Temperature
(°C)
12
14
16
Case
Temperature
(°C)
120
100
80
60
40
20
0
10
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj
=
t°C)
×
100 (%)
Repetitive Peak Off-State Current (Tj
=
25°C)
Allowable Ambient
Temperature
vs.
RMS On-State Current
160
Repetitive Peak Off-State Current vs.
Junction Temperature
10
5
7
Typical Example
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
–60 –40 –20
0 20
40 60 80
100 120 140
Ambient
Temperature
(°C)
140
120
100
80
60
40
20
0
0
0.5
Natural
convection
No Fins
Curves apply regardless
of conduction angle
Resistive,
inductive loads
1.0
1.5
2.0
2.5
3.0
RMS On-State Current (A)
Junction Temperature
(°C)
R07DS1241EJ0300 Rev.3.00
Dec 24, 2014
Page 4 of 7
BCR8PM-14LE
Holding
Current vs.
Junction Temperature
Holding
Current (Tj
=
t°C)
×
100 (%)
Holding
Current (Tj
=
25°C)
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
–60 –40 –20
0 20
40 60 80
100 120 140
Preliminary
Latching
Current vs.
Junction Temperature
10
3
7
5
3
2
10
2
7
5
3
2
Typical Example
Latching
Current (mA)
Distribution
T
2
+,
G
–
Typical Example
10
1
7
5
3
T +,
G
+
2
2
– – Typical Example
T
2
,
G
10
0
–40
0
40
80
120
160
Junction Temperature
(°C)
Junction Temperature
(°C)
Breakover Voltage (dv/dt
= xV/μs)
×
100 (%)
Breakover Voltage (dv/dt
=
1V/μs)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage (Tj
=
t°C)
×
100 (%)
Breakover Voltage (Tj
=
25°C)
160
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
160
140
120
100
80
60
40
20
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20
0 20
40 60 80
100120 140
Typical Example
Tj =
125°C
III Quadrant
I Quadrant
0
10
1
2 3
5 7
10
2
2 3
5 7
10
3
2 3
5 7
10
4
Junction Temperature
(°C)
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics
Gate
Trigger
Current (tw)
×
100 (%)
Gate
Trigger
Current (DC)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
3
Typical Example
2
Tj =
125°C
10
2
I
T
= 4
A
7
τ
= 500
μs
5
V
D
=
200 V
3
f =
3
Hz
2
10
1
7
5
Minimum
3
Characteristics
2
Value
Time
Main Voltage
(dv/dt)c
V
D
Main Current
(di/dt)c
I
T
τ
Time
Gate
Trigger
Current vs.
Gate Current Pulse
Width
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1 0
10
2 3
4 5 7
10
1
2 3
4 5 7
10
2
Typical Example
I
FGT I
I
RGT
I
I
RGT
III
I Quadrant
10
0
7
5
10
0
2 3
5 7
10
1
2 3
5 7
10
2
2 3
5 7
10
3
III Quadrant
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Current Pulse
Width
(μs)
R07DS1241EJ0300 Rev.3.00
Dec 24, 2014
Page 5 of 7
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