HAT2240C_15 datasheet, PDF - EEWORLD Datasheet

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HAT2240C_15: DescriptionSilicon N Channel MOS FET Power Switching; File Size90KB，7 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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HAT2240C_15 Overview

Silicon N Channel MOS FET Power Switching

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Data Sheet

HAT2240C

Silicon N Channel MOS FET

Power Switching

Features

•

Low on-resistance

DS(on)

= 75 mΩ typ.(at V

= 4.5 V)

•

Low drive current

•

High density mounting

•

2.5 V gate drive device

R07DS1184EJ0500

(Previous: REJ03G1241-0400)

Rev.5.00

Mar 19, 2014

Outline

RENESAS Package code: PWSF0006JA-A

(Package name: CMFPAK-6)

Indexband

2 3 4 5

DDD D

1. Source

2. Drain

3. Drain

4. Drain

5. Drain

6. Gate

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body - drain diode reverse drain current

Channel dissipation

Channel temperature

Storage temperature

Symbol

DSS

GSS

D (pulse)Note1

Pch

Note2

Tch

Tstg

Ratings

±12

2.5

900

150

–55 to +150

Unit

°C

Notes: 1. PW

≤

μs,

duty cycle

≤

2. When using the glass epoxy board (FR4 40 x 40 x 1.6mm)

R07DS1184EJ0500 Rev.5.00

Mar 19, 2014

Page 1 of 6

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