SMD Type
P-Channel
MOSFET
SI2319DS-HF
(KI2319DS-HF)
■
Features
●
V
DS (V)
=-40V
●
I
D
=-3.0A (V
GS
=-10V)
+0.1
2.4
-0.1
MOSFET
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
●
R
DS(ON)
＜
82mΩ (V
GS
=-10V)
●
R
DS(ON)
＜
130mΩ (V
GS
=-4.5V)
●
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
+0.1
1.3
-0.1
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Gate
2.Source
G
1
+0.1
0.38
-0.1
0-0.1
3
S
2
D
3.Drain
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current *1
Pulsed Drain Current
Power Dissipation
*1
Ta = 25℃
Ta = 70℃
Thermal Resistance.Junction- to-Ambient *1
Thermal Resistance.Junction- to-Ambient *2
Thermal Resistance.Junction- to-Foot
Junction Temperature
Storage Temperature Range
*1 Surface Mounted on FR4 Board, t
≤
5 sec.
*2 Surface Mounted on FR4 Board.
Ta = 25℃
Ta = 70℃
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
R
thJF
T
J
T
stg
1.25
0.8
100
166
50
150
-55 to 150
℃
℃/W
-3.0
-2.4
-12
0.75
0.48
W
5 sec
-40
±20
-2.3
-1.85
A
Steady State
Unit
V
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1
SMD Type
P-Channel
MOSFET
SI2319DS-HF
(KI2319DS-HF)
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance *1
On state drain current *1
Forward Transconductance *1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Diode Forward Voltage
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(O
n
)
I
D(ON)
g
FS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
V
SD
I
S
=-1.25 A,V
GS
=0V
V
GS
=-4.5V, V
DS
=-20V, R
L
=20Ω,R
GEN
=6Ω
I
D
=-1.0A
V
GS
=-10V, V
DS
=-20V, I
D
=-3A
V
GS
=0V, V
DS
=-20V, f=1MHz
Test Conditions
I
D
=-250μA, V
GS
=0V
V
DS
=-40V, V
GS
=0V
V
DS
=-40V, V
GS
=0V, T
J
=55℃
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
I
D
=-250μA
V
GS
=-10V, I
D
=-3.0A
V
GS
=-4.5V, I
D
=-2.4A
V
GS
=-10V, V
DS
=-5V
V
DS
=-5V, I
D
=-3.0A
-6
-1
Min
-40
MOSFET
Typ
Max
-1
-10
±100
-3
82
130
Unit
V
μA
nA
V
mΩ
A
7
470
85
65
11.3
1.7
3.3
7
15
25
25
-0.8
15
25
40
40
-1.25
-1.2
17
S
pF
nC
ns
A
V
*1Pulse test: PW
≤
300us duty cycle
≤
2%.
■
Marking
Marking
C9*
F
2
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SMD Type
P-Channel
MOSFET
SI2319DS-HF
(KI2319DS-HF)
■
Typical Characterisitics
20
MOSFET
Output Characteristics
V
GS
= 10 thru 5 V
12
Transfer Characteristics
16
I D
−
Drain Current (A)
I D
−
Drain Current (A)
10
8
12
4 V
8
6
4
T
C
= 125 C
2
25 C
−55
C
4
1 V, 2 V
3 V
0
0
2
4
6
8
10
V
DS
−
Drain-to-Source Voltage (V)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
GS
−
Gate-to-Source Voltage (V)
0.20
On-Resistance vs. Drain Current
800
700
Capacitance
)
0.16
600
C
−
Capacitance (pF)
0.12
500
400
300
200
100
C
rss
0.00
0
2
4
6
8
10
12
I
D
-
Drain Current (A)
0
0
5
10
V
DS
-
15
20
25
30
35
40
C
iss
r DS(on)
−
On-Resistance (
V
GS
= 4.5 V
0.08
V
GS
= 10 V
0.04
C
oss
Drain-to-Source Voltage (V)
10
V
DS
= 20 V
I
D
= 3 A
V GS
−
Gate-to-Source Voltage (V)
Gate Charge
1.8
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 3 A
r
DS(on)
−
On-Resiistance
(Ω)
(Normalized)
8
1.6
1.4
6
1.2
4
1.0
2
0.8
0
0
2
4
6
8
10
12
0.6
−50
−25
0
25
50
75
100
125
150
Q
−
Total Gate Charge (nC)
T
J
−
Junction Temperature ( C)
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SMD Type
P-Channel
MOSFET
SI2319DS-HF
(KI2319DS-HF)
■
Typical Characterisitics
20
10
)
I S
−
Source Current (A)
MOSFET
Source-Drain Diode Forward Voltage
0.8
0.7
0.6
r DS(on)
−
On-Resistance (
On-Resistance vs. Gate-to-Source Voltage
T
J
= 150 C
0.5
0.4
0.3
0.2
0.1
I
D
= 3 A
1
T
J
= 25 C
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
−
Source-to-Drain Voltage (V)
0.0
0
2
4
6
8
10
V
GS
−
Gate-to-Source Voltage (V)
0.6
Threshold Voltage
10
Single Pulse Power
0.4
V GS(th) Variance (V)
8
I
D
= 250 A
Power (W)
0.2
6
0.0
4
T
A
= 25 C
Single Pulse
−0.2
.
2
−0.4
−50
0
−25
0
25
50
75
100
125
150
0.01
0.1
1
Time (sec)
10
100
1000
T
J
−
Temperature ( C)
100.0
Safe Operating Area, Junction-to-Case
Limited by
r
DS(on )
10.0
I
D
−
Drain Current (A)
10 s
100 s
1.0
1 ms
10 ms
0.1
T
A
= 25 C
Single Pulse
0.01
0.1
1
10
100
V
DS
−
Drain-to-Source Voltage (V)
Square Wave Pulse Duration (sec)
100 ms
dc, 100 s, 10 s, 1 s
4
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SMD Type
P-Channel
MOSFET
SI2319DS-HF
(KI2319DS-HF)
■
Typical Characterisitics
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
MOSFET
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
Notes:
0.1
0.1
0.05
0.02
P
DM
t
1
t
2
t
1
1. Duty Cycle, D =
t
2
2. Per Unit Base = R
thJA
= 166 C/W
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
1
3. T
−
T
A
= P
DM
Z
thJA(t)
JM
4. Surface Mounted
10
100
600
Square Wave Pulse Duration (sec)
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