8050SST_15 datasheet, PDF - EEWORLD Datasheet

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8050SST_15: DescriptionNPN Plastic Encapsulated Transistor; File Size333KB，2 Pages; ManufacturerSECOS; Websitehttp://www.secosgmbh.com/

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8050SST_15 Overview

NPN Plastic Encapsulated Transistor

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8050SST

Elektronische Bauelemente

1.5A , 40V

NPN Plastic Encapsulated Transistor

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES



TO-92

General Purpose Switching and Amplification.

G

H

CLASSIFICATION OF h

FE (1)

Product-Rank

Range

8050SST-B

85~160

8050SST-C

120~200

8050SST-D

160~300

K

J

A

B

D

Emitter

Collector

Base

REF.

A

B

C

D

E

F

G

H

J

K

E

C

F

Millimeter

Min.

Max.

4.40

4.70

4.30

4.70

12.70

-

3.30

3.81

0.36

0.56

0.36

0.51

1.27 TYP.

1.10

-

2.42

2.66

0.36

0.76

Collector





Base



Emitter

ABSOLUTE MAXIMUM RATINGS

(T

A

= 25°C unless otherwise specified)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Thermal Resistance From Junction to Ambient

Junction, Storage Temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

R

θJA

T

J

, T

STG

Rating

40

25

5

1.5

1

125

150, -55~150

Unit

V

A

W

°C / W

°C

ELECTRICAL CHARACTERISTICS

(T

A

= 25°C unless otherwise specified)

Parameter

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

Collector to Emitter Saturation Voltage

Base to Emitter Saturation Voltage

Base to Emitter Voltage

Transition Frequency

Collector Output Capacitance

http://www.SeCoSGmbH.com/

Symbol

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

CEO

I

EBO

h

FE (1)

h

FE (2)

V

CE(sat)

V

BE(sat)

V

BE

f

T

C

ob

Min

40

25

5

-

85

40

-

100

-

Typ

-

Max

-

0.1

300

-

0.5

1.2

1

-

15

Unit

V

μA

Test condition

I

C

=0.1mA, I

E

=0

I

C

=0.1mA, I

B

=0

I

E

=0.1mA, I

C

=0

V

CB

=40V, I

E

=0

V

CE

=20V, I

B

=0

V

EB

=5V, I

C

=0

V

CE

=1V, I

C

=100mA

V

CE

=1V, I

C

=800mA

I

C

=800mA, I

B

=80mA

I

C

=800mA, I

B

=80mA

V

CE

=1V, I

C

=10mA

V

CE

=10V, I

C

=50mA, f=30MHz

V

CB

=10V, I

E

=0, f=1MHz

V

MHz

pF

Any changes of specification will not be informed individually.

18-Feb-2011 Rev. B

Page 1 of 2

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