SMD Type
P-Channel
MOSFET
FDN352AP
(KDN352AP)
SOT-23-3
+0.2
2.9
-0.1
+0.1
0.4
-0.1
MOSFET
Unit: mm
■
Features
●
V
DS (V)
=-30V
●
I
D
=-1.3 A (V
GS
=-10V)
●
R
DS(ON)
＜
180mΩ (V
GS
=-10V)
●
R
DS(ON)
＜
300mΩ (V
GS
=-4.5V)
+0.2
2.8
-0.1
3
+0.2
1.6
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.2
2
0.55
0.4
+0.02
0.15
-0.02
+0.2
1.1
-0.1
+0.1
0.68
-0.1
D
0-0.1
1. Gate
2. Source
3. Drain
G
S
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
(Note.1)
(Note.2)
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Junction Temperature
Junction Storage Temperature Range
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
R
thJC
T
J
T
stg
Rating
-30
±25
-1.3
-10
0.5
0.46
250
75
150
-55 to 150
Unit
V
A
W
℃/W
℃
Note.1: R
θJA
= 250°C/W when mounted on a 0.02 in
2
pad of 2oz. copper.
Note.2: R
θJA
= 270°C/W when mounted on a 0.001 in
2
pad of 2oz. copper.
www.kexin.com.cn
1
SMD Type
P-Channel
MOSFET
FDN352AP
(KDN352AP)
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(O
n
)
g
FS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
I
S
V
SD
I
S
=-0.42A,V
GS
=0V
(Note.1)
I
F
=-3.9A, d
I
/d
t
=100A/μs
V
GS
=-10V, V
DS
=-10V, I
D
=-1A,R
G
=6Ω
(Note.1)
V
GS
=-4.5V, V
DS
=-10V, I
D
=-0.9A
(Note.1)
V
GS
=0V, V
DS
=-15V, f=1MHz
Test Conditions
I
D
=-250μA, V
GS
=0V
V
DS
=-24V, V
GS
=0V
V
DS
=0V, V
GS
=±25V
V
DS
=V
GS
I
D
=-250μA (Note.1)
V
GS
=-10V, I
D
=-1.3A (Note.1)
V
GS
=-4.5V, I
D
=-1.1A
V
DS
=-5V, I
D
=-0.9A
(Note.1)
V
GS
=-4.5V, I
D
=-1.1A,T
J
=125℃ (Note.1)
Min
-30
MOSFET
Typ
Max
-1
±100
Unit
V
uA
nA
V
mΩ
S
pF
-0.8
-2.5
180
300
400
2
150
40
20
1.4
0.5
0.5
8
28
18
2
17
7
-0.42
-1.2
1.9
nC
ns
nC
A
V
Note.1:Pulse Test: Pulse Width < 300
μs,
Duty Cycle < 2.0%
■
Marking
Marking
52AP
2
www.kexin.com.cn
SMD Type
P-Channel
MOSFET
FDN352AP
(KDN352AP)
■
Typical Characterisitics
10
V
GS
= -10V
8
2.4
V
GS
= -4.0V
2.2
MOSFET
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-I
D
, DRAIN CURRENT (A)
2.0
-4.5V
1.8
-5.0V
1.6
-6.0V
1.4
1.2
1.0
0.8
-7.0V
-8.0V
-10V
-6.0V
6
-4.5V
4
-4.0V
2
-3.5V
-3.0V
0
0
1
2
3
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
4
5
0
2
4
6
-I
D
, DRAIN CURRENT (A)
8
10
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.7
1.4
I
D
= -0.9A
V
GS
= -10V
1.2
I
D
= -0.45A
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
R
DS(ON)
, ON-RESISTANCE (OHM)
0.6
0.5
1
0.4
T
A
= 125
o
C
0.3
T
A
= 25
o
C
0.2
0.8
0.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (
o
C)
125
150
0.1
2
4
6
8
-V
GS
, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. On-Resistance Variation with
Temperature.
10
V
DS
= -5V
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
V
GS
= 0V
125
o
C
-I , REVERSE DRAIN CURRENT (A)
S
8
-I
D
, DRAIN CURRENT (A)
T
A
= -55
o
C
10
1
0.1
25
o
C
6
25
o
C
T
A
= 125
o
C
4
0.01
0.001
0.0001
-55
o
C
2
0
1
2
3
4
5
6
-V
GS
, GATE TO SOURCE VOLTAGE (V)
7
8
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
www.kexin.com.cn
3
SMD Type
P-Channel
MOSFET
FDN352AP
(KDN352AP)
■
Typical Characterisitics
10
I
D
= -0.9A
200
MOSFET
-V
GS
, GATE-SOURCE VOLTAGE (V)
f = 1 MHz
V
GS
= 0 V
V
DS
= -10V
-20V
150
8
CAPACITANCE (pF)
6
-15V
4
C
iss
100
C
oss
50
C
rss
2
0
0
0.5
1
1.5
2
Q
g
, GATE CHARGE (nC)
2.5
3
0
0
5
10
15
20
25
30
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
Figure 8. Capacitance Characteristics.
50
P(pk), PEAK TRANSIENT POWER (W)
40
-I
D
, DRAIN CURRENT (A)
10
R
DS(ON)
LIMIT
1ms
1
10ms
100ms
1s
0.1
V
GS
= -10V
SINGLE PULSE
R
θ
JA
= 270
o
C/W
T
A
= 25
o
C
10s
DC
100
µs
SINGLE PULSE
R
θ
JA
= 270°C/W
T
A
= 25°C
30
20
10
0.01
0.
1
1
10
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
100
0
0.0001
0.001
0.01
0.1
1
t
1
, TIME (sec)
10
100
1000
.
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.2
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 270°C/W
P(pk)
t
1
t
2
T
J
– T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
4
www.kexin.com.cn
京公网安备 11010802033920号
EEWORLD
