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MRF173CQ_15

Description
N-CHANNEL BROADBAND RF POWER MOSFET
File Size221KB,9 Pages
ManufacturerMACOM
Websitehttp://www.macom.com
Download Datasheet View All

MRF173CQ_15 Overview

N-CHANNEL BROADBAND RF POWER MOSFET

MRF173CQ
The RF MOSFET Line
80W, 175MHz, 28V
Designed for broadband commercial and military applications up to
200 MHz frequency range. The high–power, high–gain and broadband
performance of this device makes possible solid state transmitters for
FM broadcast or TV channel frequency bands.
N–Channel enhancement mode MOSFET
M/A-COM Products
Released - Rev. 07.07
Product Image
Guaranteed performance at 150 MHz, 28 V:
Output power = 80 W
Gain = 11 dB (13 dB typ.)
Efficiency = 55% Min. (60% typ.)
Low thermal resistance
Ruggedness tested at rated output power
Nitride passivated die for enhance
ed reliability
Low noise figure — 1.5 dB typ. at 2.0 A, 150 MHz
Excellent thermal stability; suited for Class A operation
CASE 316–01, STYLE 2
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
North America
Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.

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