SMD Type
NPN Transistors
MJD13001
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
Unit: mm
■
Features
+0.1
2.4
-0.1
+0.1
1.3
-0.1
●
Power switching applications
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
+0.1
0.38
-0.1
0-0.1
3.collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Rating
700
400
8
200
300
150
-55 to 150
mA
mW
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector- emitter cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Rail time
Storage time
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE(1)
h
FE(2)
h
FE(3)
t
r
t
s
f
T
Test Conditions
Ic= 1 mA， I
E
= 0
Ic= 1 mA， I
B
= 0
I
E
= 100μA， I
C
= 0
V
CB
= 600 V , I
E
= 0
V
CE
= 400 V , I
E
= 0
V
EB
= 7V , I
C
=0
I
C
=50 mA, I
B
=10mA
I
C
=50 mA, I
B
=10mA
V
CE
= 20V, I
C
= 20mA
V
CE
= 10V, I
C
= 0.25mA
V
CE
= 10V, I
C
= 500mA
I
C
= 100mA
V
CE
= 20V, I
C
= 20mA,f=1MHz
10
5
1
0.9
0.9
8
2.4
uS
MHz
Min
700
400
8
100
100
100
0.4
1.1
40
V
uA
V
Typ
Max
Unit
■
Classification of h
fe(1)
Type
Range
Marking
MJD13001-A
10-15
3001A
MJD13001-B
15-20
3001B
MJD13001-C
20-25
3001C
MJD13001-D
25-30
3001D
MJD13001-E
30-35
3001E
MJD13001-F
35-40
3001F
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1
SMD Type
NPN Transistors
■
Typical Characterisitics
40
Transistors
MJD13001
40
Static Characteristic
1.5mA
COMMON
EMITTER
T
a
=25
℃
h
FE
—— I
C
V
CE
=20V
COLLECTOR CURRENT I
C
(mA)
1.35mA
30
DC CURRENT GAIN h
FE
1.2mA
1.05mA
30
T
a
=100
℃
20
900uA
750uA
600uA
20
T
a
=25
℃
10
450uA
300uA
I
B
=150uA
10
0
0
10
20
30
40
50
0
0.1
0.3
1
3
10
30
100
200
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
500
V
CEsat
——
I
C
1.2
V
BEsat
——
I
C
β=5
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
300
1.0
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
T
a
=100
℃
100
0.8
T
a
=25
℃
T
a
=100
℃
T
a
=25
℃
0.6
0.4
30
0.2
10
0.1
β=5
0.3
1
3
10
30
100
200
0.0
0.1
0.3
1
3
10
30
100
200
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
200
100
I
C
——
V
BE
V
CE
=20V
300
C
ob
/ C
ib
——
V
CB
/ V
EB
f=1MHz
I
E
=0/I
C
=0
COLLCETOR CURRENT I
C
(mA)
100
C
ib
T
a
=25
℃
30
CAPACITANCE C (pF)
T
a
=100
℃
30
T
a
=25
℃
10
10
C
ob
3
3
1
0.4
0.6
0.8
1.0
1
0.1
0.3
1
3
10
20
BASE-EMMITER VOLTAGE
V
BE
(V)
REVERSE VOLTAGE
V
(V)
0.5
P
C
——
T
a
COLLECTOR POWER DISSIPATION
P
C
(W)
0.4
0.3
0.2
0.1
0.0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
T
a
(
℃
)
2
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