SMD Type
PNP Transistors
BCW68
(KCW68)
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
Unit: mm
■
Features
+0.1
2.4
-0.1
three groups F, G and H according to its DC current gain.
+0.1
1.3
-0.1
●
Complementary to BCW66, BCW68 is subdivided into
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
-0.1
1.Base
2.Emitter
+0.1
0.38
-0.1
0-0.1
3.collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Rating
-60
-45
-5
-800
330
150
-55 to 150
mA
mW
℃
V
Unit
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1
SMD Type
PNP Transistors
BCW68
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
Test Conditions
Ic= -100
μA，
I
E
=0
Ic= -10 mA， I
B
=0
I
E
= -100μA， I
C
=0
V
CB
= -45 V , I
E
=0
V
EB
= -4V , I
C
=0
I
C
=-100 mA, I
B
=-10mA
I
C
=-500 mA, I
B
=-50mA
I
C
=-100 mA, I
B
=-10mA
I
C
=-500 mA, I
B
=-50mA
V
CE
= -10V, I
C
= -0.1mA
h
FE(1)
V
CE
= -1V, I
C
= -10mA
h
FE(2)
DC current gain
h
FE(3)
V
CE
= -2V, I
C
= -500mA
h
FE(4)
Collector output capacitance
Collector input capacitance
Transition frequency
C
ob
C
ib
f
T
V
CB
= -10V, I
E
= 0,f=1MHz
V
EB
= -0.5V, I
E
= 0,f=1MHz
V
CE
= -5V, I
C
= -50mA,f=20MHz
V
CE
= -1V, I
C
= -100mA
F
G
H
F
G
H
F
G
H
F
G
H
Transistors
(KCW68)
Min
-60
-45
-5
Typ
Max
Unit
V
-20
-20
-0.3
-0.7
-1.25
-2
35
50
80
75
120
180
100
160
250
35
60
100
6
60
200
250
400
630
nA
V
pF
MHz
■
Classification of h
fe(3)
Type
Range
Marking
BCW68F
100-250
DF
BCW68G
160-400
DG
BCW68H
250-630
DH
2
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SMD Type
PNP Transistors
BCW68
■
Typical Characterisitics
-350
Transistors
(KCW68)
h
FE
—— I
C
COMMON EMITTER
V
CE
=-1V
T
a
=100 C
o
Static Characteristic
COMMON
EMITTER
T
a
=25
℃
h
FE
DC CURRENT GAIN
-480uA
-400uA
800
700
600
500
400
300
200
100
-300
(mA)
-800uA
-250
-720uA
-640uA
-560uA
COLLECTOR CURRENT
I
C
-200
-320uA
-240uA
-160uA
-150
T
a
=25 C
o
-100
-50
I
B
=-80uA
-0
-1
-2
-3
-4
-5
-6
-7
-8
-0
-0.1
-1
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
-10
I
C
(mA)
-100
-800
-1.2
V
BEsat
—— I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
β=10
-500
V
CEsat
——
β=10
I
C
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
-1.0
-400
-0.8
T
a
=25
℃
-300
-0.6
-200
-0.4
T
a
=100
℃
-0.2
-100
T
a
=100
℃
T
a
=25
℃
-0.0
-0.1
-1
-10
-100
-800
-0
-0.1
-1
-10
-100
-800
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
300
f
T
——
I
C
100
C
ob
/ C
ib
——
V
CB
/
V
EB
C
ib
f=1MHz
I
E
=0 / I
C
=0
T
a
=25 C
o
(MHz)
250
f
T
TRANSITION FREQUENCY
CAPACITANCE
C
10
200
150
(pF)
C
ob
100
50
COMMON EMITTER
V
CE
=-5V
T
a
=25 C
o
0
-1
-10
-100
1
-0.1
COLLECTOR CURRENT
I
C
(mA)
REVERSE VOLTAGE
-1
V
(V)
-10
-20
0.4
P
c
——
T
a
COLLECTOR POWER DISSIPATION
P
c
(W)
0.33
0.3
0.2
0.1
0.0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
T
a
(
℃
)
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