SMD Type
NPN Transistors
MMBT3904DW
(KMBT3904DW)
Transistors
■
Features
●
Epitaxial planar die construction
●
Ideal for low power amplification and switching
●
Dual NPN Transistors
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEX
I
EBO
V
CE(sat)
V
BE(sat)
h
FE(1)
DC current gain
Delay time
Rise time
Storage time
Fall time
Noise figure
Collector output capacitance
Transition frequency
h
FE(2)
h
FE(3)
t
d
t
r
t
s
t
f
NF
C
ob
f
T
K6N
Rating
60
40
5
200
200
150
-55 to 150
Test Conditions
Ic= 100 μA， I
E
=0
Ic= 1 mA， I
B
=0
I
E
= 100μA， I
C
=0
V
CB
= 60 V , I
E
=0
V
CE
= 30 V , V
EB(OFF)
= -3V
V
EB
= 5V , I
C
=0
I
C
=10 mA, I
B
=1mA
I
C
=50 mA, I
B
=5mA
I
C
=10 mA, I
B
=1mA
I
C
=50 mA, I
B
=5mA
V
CE
= 1V, I
C
= 0.1mA
V
CE
= 1V, I
C
= 10mA
V
CE
= 1V, I
C
= 50mA
V
CC
=3V, V
BE
= - 0.5V
I
C
=10mA , I
B1
=-I
B2
=1mA
V
CC
=3V, I
C
=10mA , I
B1
=-I
B2
=1mA
V
CE
=5V,Ic=0.1mA,f=1KHz,R
S
=1KΩ
V
CB
= 5V, I
E
= 0,f=1MHz,f=100MHz
V
CE
= 20V, I
C
= 10mA,f=100MHz
300
40
100
60
35
35
200
50
5
4
dB
pF
MHz
ns
300
0.65
mA
mW
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector- emittercut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Min
60
40
5
50
50
50
0.2
0.3
0.85
0.95
V
nA
V
Typ
Max
Unit
■
Marking
Marking
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