SMD Type
PNP Transistors
2SB1115A-HF
Transistors
■
Features
●
Low VCE(sat) V
CE(sat)
=-0.2V at 1A
●
Complementary to 2SD1615A-HF
●
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
0.42 0.1
1.70
0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector current -Pulse
Junction Temperature
Storage Temperature range
Note.1: PW
≤
10ms,Duty Cycle
≤
50℅
(Note.1)
Collector Power Dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
stg
Rating
-80
-60
-6
-1
-2
2
150
-55 to 150
A
W
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage (Note.1)
Base - emitter saturation voltage (Note.1)
Base - emitter voltage
DC current gain
(Note.1)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE
h
FE
C
ob
f
T
Test Conditions
Ic= -100 μA， I
E
=0
Ic= -1 mA， I
B
=0
I
E
= -100μA， I
C
=0
V
CB
= -80V , I
E
=0
V
EB
= -6V , I
C
=0
I
C
=-1 A, I
B
=-50mA
I
C
=-1 A, I
B
=-50mA
V
CE
= -2V, I
C
= -50 mA
V
CE
= -2V, I
C
= -100 mA
V
CE
= -2V, I
C
= -1 A
V
CB
= –10V, I
E
= 0, f = 1MHz
V
CE
= -2V, I
C
= -100mA
80
-0.6
135
100
340
200
25
120
pF
MHz
-0.2
-0.9
Min
-80
-60
-6
-0.1
-0.1
-0.3
-1.2
-0.7
400
V
uA
V
Typ
Max
Unit
(Note.1)
Collector output capacitance
Transition frequency
Note.1: Pulse: PW
≤
350us,Duty Cycle
≤
2℅
■
Classification of h
fe(1)
Type
Range
Marking
2SB1115A-Q-HF 2SB1115A-P-HF
135-270
YQ
F
200-400
YP
F
www.kexin.com.cn
1
京公网安备 11010802033920号
EEWORLD
