SMD Type
NPN Transistors
BC847T
(KC847T)
SOT-523
+0.
1
1.6
-0.1
+0.1
1.0
-0.1
+0.05
0.2
-0.05
Transistors
U n it: m m
0.15±0.05
0.55 (REF.)
2
1
1.
-0.15
6
+0.15
■
Features
●
Ideally suited for automatic insertion
●
For Switching and AF Amplifier Applications
3
0.3±0.05
+0.1
0.5
-0.1
0.
36±0.1
1. Base
0.
-0.05
75
+0.05
+0.
1
-0.
1
0.
8
2. Emitter
3. Collecter
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Rating
50
45
6
0.1
150
150
-55 to 150
A
mW
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base-emitter voltage
BC847AT
DC current gain
BC847BT
BC847CT
Noise figure
Collector output capacitance
Transition frequency
BC847AT/BT
BC847CT
NF
C
ob
f
T
BC847BT
200-450
1F
BC847CT
420-800
1G
V
CE
=5V,f=1MHz,Ic=0.2mA
Rs=2KΩ,BW=200HZ
V
CB
= 10V,f=1MHz
V
CE
= 5 V, I
C
=10mA,f=100MHz
100
h
FE
V
CE
= 5V, I
C
= 2mA
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
Test Conditions
Ic= 100 μA, I
E
=0
Ic= 10 mA, I
B
=0
I
E
= 100μA, I
C
=0
V
CB
= 30 V , I
E
=0
V
EB
= 6V , I
C
=0
I
C
=10 mA, I
B
=0.5mA
I
C
=100 mA, I
B
=5mA
I
C
=10 mA, I
B
=0.5mA
I
C
=100 mA, I
B
=5mA
V
CE
= 5V, I
C
= 2mA
V
CE
= 5V, I
C
= 10mA
110
200
420
0.58
0.7
0.9
0.7
0.77
220
450
800
10
4
4.5
dB
pF
MHz
Min
50
45
6
15
0.1
0.25
0.6
V
nA
uA
V
Typ
Max
Unit
■
Classification of hfe
Type
Range
Marking
BC847AT
110-220
1E
0.
8±0.1
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1
SMD Type
NPN Transistors
BC847T
(KC847T)
■
Typical Characterisitics
Static Characteristic
10
Transistors
COLLECTOR CURRENT I
C
(mA)
8
COMMON
EMITTER
T
a
=25
℃
3000
h
FE
—— I
C
COMMON EMITTER
V
CE
= 5V
1000
18uA
6
16uA
14uA
DC CURRENT GAIN h
FE
20uA
T
a
=100
℃
T
a
=25
℃
100
4
12uA
10uA
8uA
6uA
4uA
2
0
I
B
=2uA
0
1
2
3
4
5
6
7
10
1
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
10
I
C
(mA)
100
1000
V
BEsat
β=20
——
I
C
500
V
CEsat
β=20
——
I
C
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
800
T
a
=25
℃
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
T
a
=100
℃
100
600
T
a
=25
℃
T
a
=100
℃
400
200
0.1
1
10
100
10
0.1
1
10
100
COLLECTOR CURREMT
I
C
BE
(mA)
COLLECTOR CURREMT
I
C
(mA)
100
I
C
COMMON EMITTER
V
CE
=5V
——
V
500
f
T
—— I
C
T =1
00
℃
a
10
TRANSITION FREQUENCY f
T
(MHz)
COLLECTOR CURRENT I
C
(mA)
1
T =2
5
℃
a
100
T
a
=25
℃
0.1
200
400
600
800
10
0.25
2
COMMON EMITTER
V
CE
=5V
BASE-EMMITER VOLTAGE V
BE
(mV)
COLLECTOR CURRENT
4
6
I
C
8
(mA)
10
12
100
C
ob
/C
ib
—— V
CB
/V
EB
f=1MHz
I
E
=0/I
C
=0
200
P
C
——
a
T
T
a
=25
℃
COLLECTOR POWER DISSIPATION
P
C
(mW)
CAPACITANCE C (pF)
10
C
ib
150
100
C
ob
1
50
0.1
0.1
0
1
10
30
0
25
50
75
100
125
150
REVERSE VOLTAGE
V
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
2
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