BC847T_15 datasheet, PDF - EEWORLD Datasheet

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BC847T_15: Description100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR; Categorysemiconductor Discrete semiconductor; File Size1MB，2 Pages; ManufacturerKEXIN; Websitehttp://www.kexin.com.cn/html/index.htm

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BC847T_15 Overview

100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR

BC847T_15 Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	NPN
Maximum collector current	0.1000 A
Maximum Collector-Emitter Voltage	45 V
Processing package description	PLASTIC, ULTRAMINI-3
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	FLAT
terminal coating	TIN LEAD
Terminal location	DUAL
Packaging Materials	PLASTIC/EPOXY
structure	SINGLE
Number of components	1
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum ambient power consumption	0.2500 W
Transistor type	GENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor	110
Rated crossover frequency	100 MHz

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SMD Type

NPN Transistors

BC847T

(KC847T)

SOT-523

+0.

1

1.6

-0.1

+0.1

1.0

-0.1

+0.05

0.2

-0.05

Transistors

U n it: m m

0.15±0.05

0.55 (REF.)

2

1

1.

-0.15

6

+0.15

■

Features

●

Ideally suited for automatic insertion

●

For Switching and AF Amplifier Applications

3

0.3±0.05

+0.1

0.5

-0.1

0.

36±0.1

1. Base

0.

-0.05

75

+0.05

+0.

1

-0.

1

0.

8

2. Emitter

3. Collecter

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature range

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

J

T

stg

Rating

50

45

6

0.1

150

-55 to 150

A

mW

℃

V

Unit

■

Electrical Characteristics Ta = 25℃

Parameter

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base-emitter voltage

BC847AT

DC current gain

BC847BT

BC847CT

Noise figure

Collector output capacitance

Transition frequency

BC847AT/BT

BC847CT

NF

C

ob

f

T

BC847BT

200-450

1F

BC847CT

420-800

1G

V

CE

=5V,f=1MHz,Ic=0.2mA

Rs=2KΩ,BW=200HZ

V

CB

= 10V,f=1MHz

V

CE

= 5 V, I

C

=10mA,f=100MHz

100

h

FE

V

CE

= 5V, I

C

= 2mA

Symbol

V

CBO

V

CEO

V

EBO

I

CBO

I

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

Test Conditions

Ic= 100 μA， I

E

=0

Ic= 10 mA， I

B

=0

I

E

= 100μA， I

C

=0

V

CB

= 30 V , I

E

=0

V

EB

= 6V , I

C

=0

I

C

=10 mA, I

B

=0.5mA

I

C

=100 mA, I

B

=5mA

I

C

=10 mA, I

B

=0.5mA

I

C

=100 mA, I

B

=5mA

V

CE

= 5V, I

C

= 2mA

V

CE

= 5V, I

C

= 10mA

110

200

420

0.58

0.7

0.9

0.7

0.77

220

450

800

10

4

4.5

dB

pF

MHz

Min

50

45

6

15

0.1

0.25

0.6

V

nA

uA

V

Typ

Max

Unit

■

Classification of hfe

Type

Range

Marking

BC847AT

110-220

1E

0.

8±0.1

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BC847T_15 Related Products

	BC847T_15	BC847AT	BC847BT	BC847CT
Description	100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR	100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR	100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR	100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Number of terminals	3	3	3	3
Transistor polarity	NPN	NPN	NPN	NPN
Maximum collector current	0.1000 A	0.1000 A	0.1000 A	0.1000 A
Maximum Collector-Emitter Voltage	45 V	45 V	45 V	45 V
Processing package description	PLASTIC, ULTRAMINI-3	PLASTIC, ULTRAMINI-3	PLASTIC, ULTRAMINI-3	Plastic, ULTRAMINI-3
state	ACTIVE	ACTIVE	ACTIVE	ACTIVE
packaging shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	Rectangle
Package Size	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
surface mount	Yes	Yes	Yes	Yes
Terminal form	FLAT	FLAT	FLAT	FLAT
terminal coating	TIN LEAD	TIN LEAD	TIN LEAD	tin lead
Terminal location	DUAL	DUAL	DUAL	pair
Packaging Materials	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	Plastic/Epoxy
structure	SINGLE	SINGLE	SINGLE	single
Number of components	1	1	1	1
transistor applications	SWITCHING	SWITCHING	SWITCHING	switch
Transistor component materials	SILICON	SILICON	SILICON	silicon
Maximum ambient power consumption	0.2500 W	0.2500 W	0.2500 W	0.2500 W
Transistor type	GENERAL PURPOSE SMALL SIGNAL	GENERAL PURPOSE SMALL SIGNAL	GENERAL PURPOSE SMALL SIGNAL	Universal small signal
Minimum DC amplification factor	110	110	110	420
Rated crossover frequency	100 MHz	100 MHz	100 MHz	100 MHz

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