SMBJ5.0 thru SMBJ170CA
Transient Voltage Suppressor
Breakdown Voltage 5.0 to 170 Volts
Peak Pulse Power
600 Watts
Features
CASE: SMB (DO214AA)
Breakdown Voltages (V
BR
) from 5.0 to 170V
600W peak pulse power capability with a 10/1000μs
waveform, repetitive rate (duty cycle):0.01%
Fast Response Time
Low incremental surge resistance
Excellent clamping capability
Available in uni-directional and bi-directional
High temperature soldering guaranteed: 265
℃
/10
seconds, 0.375” (9.5mm) lead length, 5lbs. (2.3kg)
tension
Application
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
@
Symbol
P
PPM
I
PPM
Conditions
Peak pulse power capability with a 10/1000μs
Peak pulse current with a 10/1000μs
印
打
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on IC
S
, MOSFE, signal lines of sensor units for
consumer, computer, industrial, automotive and
telecommunication
Mechanical Data
Case:
Void-free transfer molded thermosetting epoxy
body meeting UL94V-O
Terminals:
Tin-Lead or ROHS Compliant annealed
matte-Tin plating readily solderable per MIL-STD-750,
Method 2026
Marking:
Body marked with part number
Polarity:
Cathode indicated by band. No marking on bi-
directional devices
Weight:
0.093g（Approximately）
25 C unless otherwise specified
O
效
无
Value
600
SEE TABLE1
5.0
1.38
100
3.5
25
90
Unit
W
A
W
W
A
V
℃/W
℃/W
Steady state power dissipation at T
L
=25℃ ,Lead lengths 0.375”(10mm)
P
M(AV)
I
FSM
V
F
R
θJL
R
θJA
Steady state power dissipation at T
A
=25℃ when mounted on FR4 PC
described for thermal resistance
Peak forward surge current,8.3ms single half sine-wave unidirectional only⑴
Maximum instantaneous forward voltage at 30A for unidirectional only
Thermal resistance junction to lead
Thermal resistance junction to ambient
T
J,
T
STG
Operating and Storage Temperature
-65 to +150
℃
Notes:
⑴
Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum
Document Number: SMBJ5.0 thru SMBJ170CA
Feb.29, 2012
www.smsemi.com
1
SMBJ5.0 thru SMBJ170CA
Characteristic Curve
100
1.0
I
PP
0.5
I
PP
Impulse
Exponential
Decay
t
W
Half Sine
t
W
=0.71
p
t
p
Square
Wave
150
I
PP
- Peak Pulse Current - % I
PP
t
r
=10µs
Peak Value I
PP
P
PP
- Peak Pulse Power (kW)
10
t
W
100
Half Value I
PP
2
t
W
Current Waveforms
1.0
50
10/1000µs Waveform
as defined by R.E.A.
0.1
0.1
1.0
10
10
2
t
w
-Pulse Width (
µs)
10
3
10
4
0
Fig. 1 Peak Pulse Power vs. Pulse Time
100
P
PP
-Peak Pulse Power or continuous
Average Power in Percent of 25
℃
(%)
Peak Pulse Power
(Single pulse).
Fig.2 Pulse Waveform for Exponential Surge
10
4
C
J
– Junction Capacitance (pF)
75
10
3
50
25
0
100
Peak Forward Surge Current (A)
印
打
Average
Power
10
效
无
0
1.0
2.0
3.0
t-Time (ms)
Measured at
Zero Bias
2
Measured at
Stand-off Voltage
0
50
100
150
Lead or Ambient Temperature (℃)
200
10
1
10
10
2
VBR – Breakdown Voltage (V)
10
3
Fig.3 Derating Curve
Fig.4 Typical Capacitance vs.
Breakdown Voltage (Unipolar)
T
J
=T
J
Max.
8.3ms Single Half Sine-Wave
10
1
10
Number of Cycles at 60H
Z
100
Fig.5 Max. Non-Repetitive Forward Surge Current
Uni-Directional Only
Document Number: SMBJ5.0 thru SMBJ170CA
Feb.29, 2012
www.smsemi.com
4
Embedded System
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