TIGER ELECTRONIC CO.,LTD
SMD Type
4 Quadrants Sensitive TRIACS
KTA1A60 / KTA1A80
Thyristor
■
Features
●
Repetitive peak off-state voltages :600V/800V
●
RMS on-state current :1A
●
Sensitive Gate Trigger Current
- 5mA of IGT at I, II and III Quadrants.
- 12mA of IGT at IV Quadrant.
0.42 0.1
1.70
0.1
0.46 0.1
1.T1
2.T2
3.Gate
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Peak Repetitive Forward and Reverse Blocking
Voltages
Average On-State Current Tc=72℃
RMS on-state Current Tc=72℃
Non-Repetitive Peak on-state Current
Circuit Fusing Considerations (t = 10ms)
Forward Peak Gate Current T
J
=125℃
Reverse Peak Gate Voltage T
J
=125℃
Peak Gate Power T
J
=125℃
Average Gate Power T
J
= 125℃
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Case
junction Temperature
Storage Temperature range
Symbol
V
DRM
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
I
FGM
V
RGM
P
GM
P
G(AV)
R
thJA
R
thJC
T
J
T
stg
KTT1A60
600
0.9
1
12/13
0.7
0.5
6
2
0.2
150
48
125
-40to150
A
A
2
s
A
V
W
K/W
KTT1A80
800
V
Unit
℃
1
SMD Type
4 Quadrants Sensitive TRIACS
KTA1A60 / KTA1A80
■
Electrical Characteristics
(Ta = 25℃, unless otherwise noted.)
Parameter
Repetitive Peak Off-State Voltage
Repetitive Peak Reverse Voltage
Repetitive Peak Off-State Current
Repetitive Peak Reverse Current
On-state Voltage
Gate Trigger Voltage
Gate Trigger Current
Holding Current
Critical Rate of rise of off-state Voltage
Non-Trigger Gate Voltage
(Note.1)
Symbol
V
DRM
V
RRM
I
DRM
V
DRM
=V
RRM
I
RRM
V
TM
V
GT
I
GT
I
H
d
V
/dt
V
GD
I
T
=1.4A,I
G
=20mA
V
D
=12V, R
L
=330Ω
V
D
=12V, R
L
=330Ω
I
T
=200mA
V
D
= 2/3 V
DRM
,T
J
= 125℃
V
D
= 12V, R
L
=330Ω, T
J
=125℃
1+,1-,3-
3+
1+,1-,3-
3+
Test Conditions
Sine wave, 50/60Hz, Gate open
KTT1A60
KTT1A80
T
J
= 25℃
T
J
= 125℃
T
J
= 25℃
T
J
= 125℃
Thyristor
Min
600
800
Typ.
Max
Unit
V
50
5
50
5
1.2
1.6
1.5
2
5
12
5
10
0.2
uA
mA
uA
mA
V
mA
V/us
V
Note.1: Pulse Width
≤
1.0ms, Duty Cycle
≤
1%
■
Marking
h
FE
Classification
NO
Marking
KTT1A60
1A60
KTT1A80
1A80
■
Typical Characterisitics
1.2
1.0
130
180
150
o
120
o
o
Maximum allowable case temperature, T
C
[
o
C]
120
110
100
90
30
o
60
o
Power dissipation, P
D
[W]
0.8
0.6
0.4
0.2
0.0
0.0
90
o
90
o
60
o
30
0.2
o
120
o
80
70
0.0
150
o
180
o
0.2
0.4
0.6
0.8
1.0
1.2
0.4
0.6
0.8
1.0
R.M.S. on state current, I
T(RMS)
[A]
R.M.S. on state current, I
T(RMS)
[A]
Fig 1. R.M.S. current vs. Power dissipation
Fig 2. R.M.S. current vs. Case temperature
2
SMD Type
4 Quadrants Sensitive TRIACS
KTA1A60 / KTA1A80
■
Typical Characterisitics
10
1
15
Thyristor
Gate voltage, V
G
[V]
25[
o
C]
I
+
GT3
P
G(AV)
(0.2W)
10
0
Surge on state current, I
TSM
[A]
P
GM
(2W)
12
9
60Hz
50Hz
25[
o
C]
I
+
GT1
I
-
GT1
I
-
GT3
V
GD
6
3
10
-1
10
0
10
1
10
2
10
3
0
10
0
10
1
10
2
Gate current, I
G
[mA]
Time [cycles]
Fig 3. Gate power characteristics
Fig 4. Surge on state current rating
(Non-repetitive)
2.5
3.0
2.5
2.0
X 100(%)
2.0
1.5
1.0
0.5
0.0
-50
X 100(%)
1.5
I
+
GT1
I
-
GT1
I
-
GT3
I
+
GT3
-25
0
25
50
75
o
1.0
V
+
GT1
V
-
GT1
V
+
GT3
V
-
GT3
V
GT
(25
o
C)
I
GT
(25
o
C)
V
GT
(t
o
C)
I
GT
(t
o
C)
0.5
100
125
150
0.0
-50
-25
0
25
50
75
o
100
125
150
Junction Temperature, T
J
[ C]
Junction temperature, T
J
[ C]
Fig 5. Gate trigger current vs.
junction temperature
10
1
10
3
Fig 6. Gate trigger voltage vs.
junction temperature
Instantaneous on state current, I
T
[A]
T
J
=125
o
C
Thermal impedance [
o
C/W]
5
T
J
=25
o
C
10
2
10
0
10
1
R
S
=0.16Ω
V
TO
=1.10V
10
-1
0
1
2
3
4
10
0
10
-2
10
-1
10
0
10
1
Instantaneous on state voltage, V
T
[V]
Pulse Time [sec]
Fig 7. Instantaneous on state current vs.
Instantaneous on state voltage
Fig 8. Thermal Impedance vs. pulse time
3
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