Plastic-Encapsulate Diodes
SWITCHING DIODES
FEATURES
Low forward voltage : VF(3)=0.92V(typ.)
Fast reverse recovery time : trr=1.6ns(typ.)
1SS181
MARKING
:
A3
MAXIMUM RATINGS (TA=25
unless otherwise noted)
Parameter
Non-Repetitive Peak reverse
voltage
DC Blocking
Voltage
Symbol
V
RM
V
R
Limits
85
80
Unit
V
V
1. CATHODE
2. CATHODE
3. ANODE
SOT-23
Forward Continuous Current
Average Rectified Output
Current Dissipation
Power
Junction temperature
Storage temperature range
ELECTRICAL CHARACTERISTICS (Tamb=25
mi
Li
.,
Co
/
r
hk
to
i.
uc
em
nd
os
co 3
mi 87 ak
Se - .m
78 w
KO -3 ww
MA 08 ://
40 tp
ht
I
FM
I
O
300
100
mA
mA
P
D
T
J
150
mW
125
T
STG
-55-125
unless otherwise specified)
Parameter
Symbol
V
(BR)R
V
F1
Min.
80
Typ.
Max.
Unit
V
Conditions
I
R
=100μA
I
F
=1mA
I
F
=10mA
I
F
=100mA
V
R
=30V
V
R
=80V
V
R
=0,f=1MHz
I
F
=I
R
=10mA,Irr=0.1×I
R
Reverse Breakdown Voltage
0.61
V
V
Forward voltage
V
F2
V
F3
0.74
te
0.92
1.2
0.1
0.5
V
d
Reverse current
Capacitance between terminals
Reverse recovery time
I
R1
I
R2
C
T
t
rr
2.2
1.6
uA
uA
pF
ns
4.0
4.0
MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/
Page:P2-P1
Plastic-Encapsulate Diodes
1SS181
Typical Characteristics
MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/
mi
Li
.,
Co
/
r
hk
to
i.
uc
em
nd
os
co 3
mi 87 ak
Se - .m
78 w
KO -3 ww
MA 08 ://
40 tp
ht
te
d
Page:P2-P2
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