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MB351W

Description
BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size63KB,2 Pages
ManufacturerGoodwork Semiconductor ( GW )
Websitehttp://www.goodwork.com.tw/
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MB351W Overview

BRIDGE RECTIFIER DIODE

MB351W Parametric

Parameter NameAttribute value
MakerGoodwork Semiconductor ( GW )
Reach Compliance Codeunknow
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
Maximum non-repetitive peak forward current400 A
Number of components4
Maximum operating temperature125 °C
Maximum output current35 A
Maximum repetitive peak reverse voltage100 V
surface mountNO
MB3505W
THRU
MB3510W
SINGLE PHASE 35 AMP BRIDGE RECTIFIERS
VOLTAGE RANGE
50 to 1000 Volts
CURRENT
35.0 Amperes
MB-W
.452
MAX.
(11.5)
FEATURES
* Superior thermal design
* 400 amperes surge capability
* Mounting: Hole thru for #8 screw
.042(1.1)
DIA.
.039(1.0)
TYP.
.591
MIN.
(15.0)
1.181(30.0)
1.102(28.0)
.673(17.1)
.633(16.1)
HOLE FOR
NO. 8 SCREW
AC
.732(18.6)
.692(17.6)
+
AC
.468(11.9)
.429(10.9)
1.181(30.0)
1.102(28.0)
.732(18.6)
.692(17.6)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Length at Tc=55 C
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Forward Voltage Drop per Bridge Element at 17.5AD.C.
Maximum DC Reverse Current
Ta=25 C
at Rated DC Blocking Voltage
Operating Temperature Range, T
J
Storage Temperature Range, T
STG
Ta=100 C
MB3505W MB351W
MB352W
MB354W MB356W
MB358W MB3510W
UNITS
50
35
50
100
70
100
200
140
200
400
280
400
35
400
1.1
10
500
-65 +150
-65 +150
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
V
A
A
C
C
334

MB351W Related Products

MB351W MB354W MB3505W MB3510W MB352W MB356W MB358W
Description BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE 35 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 35 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE 35 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
Maker Goodwork Semiconductor ( GW ) Goodwork Semiconductor ( GW ) Goodwork Semiconductor ( GW ) Goodwork Semiconductor ( GW ) Goodwork Semiconductor ( GW ) Goodwork Semiconductor ( GW ) Goodwork Semiconductor ( GW )
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V
Maximum non-repetitive peak forward current 400 A 400 A 400 A 400 A 400 A 400 A 400 A
Number of components 4 4 4 4 4 4 4
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Maximum output current 35 A 35 A 35 A 35 A 35 A 35 A 35 A
Maximum repetitive peak reverse voltage 100 V 400 V 50 V 1000 V 200 V 600 V 800 V
surface mount NO NO NO NO NO NO NO
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