1N4935 datasheet, PDF - EEWORLD Datasheet

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1N4935: Description1 A, 200 V, SILICON, SIGNAL DIODE, DO-41; CategoryDiscrete semiconductor diode; File Size69KB，2 Pages; ManufacturerGoodwork Semiconductor ( GW ); Websitehttp://www.goodwork.com.tw/

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1N4935 Overview

1 A, 200 V, SILICON, SIGNAL DIODE, DO-41

1N4935 Parametric

Parameter Name	Attribute value
Maker	Goodwork Semiconductor ( GW )
Reach Compliance Code	unknow
Configuration	SINGLE
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.2 V
Maximum non-repetitive peak forward current	30 A
Number of components	1
Maximum operating temperature	150 °C
Maximum output current	1 A
Maximum repetitive peak reverse voltage	200 V
Maximum reverse recovery time	0.2 µs
surface mount	NO

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1N4933

THRU

1N4937

1.0 AMP FAST RECOVERY RECTIFIERS

VOLTAGE RANGE

50 to 600 Volts

CURRENT

FEATURES

* Low forward voltage drop

* Low leakage current

* High reliability

* High current capability

1.0 Ampere

DO-41

.107(2.7)

.080(2.0)

DIA.

1.0(25.4)

MIN.

MECHANICAL DATA

* Case: Molded plastic

* Epoxy: UL 94V-0 rate flame retardant

* Lead: Axial leads, solderable per MIL-STD-202,

method 208 guranteed

* Polarity: Color band denotes cathode end

* Mounting position: Any

.034(.9)

.028(.7)

DIA.

.205(5.2)

.166(4.2)

1.0(25.4)

MIN.

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating 25 C ambient temperature uniess otherwies specified.

Single phase half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

TYPE NUMBER

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

.375"(9.5mm) Lead Length at Ta=75 C

Peak Forward Surge Current, 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

Maximum Instantaneous Forward Voltage at 1.0A

Maximum DC Reverse Current

Ta=25 C

at Rated DC Blocking Voltage

Ta=100 C

Maximum Reverse Recovery Time (Note 1)

Typical Junction Capacitance (Note 2)

Operating and Storage Temperature Range T

, T

STG

NOTES:

1N4933

1N4934

100

1N4935

200

140

200

1.0

1.2

5.0

100

200

-65 +150

1N4936

400

280

400

1N4937

600

420

600

UNITS

1. Reverse Recovery Time test condition:IF=1.0A, VR=30V.

2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.

168

1N4935 Related Products

	1N4935	1N4936	1N4933	1N4934	1N4937
Description	1 A, 200 V, SILICON, SIGNAL DIODE, DO-41	1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL	1 A, 50 V, SILICON, SIGNAL DIODE	1 A, 100 V, SILICON, SIGNAL DIODE	1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
Maker	Goodwork Semiconductor ( GW )	Goodwork Semiconductor ( GW )	Goodwork Semiconductor ( GW )	Goodwork Semiconductor ( GW )	Goodwork Semiconductor ( GW )
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.2 V	1.2 V	1.2 V	1.2 V	1.2 V
Maximum non-repetitive peak forward current	30 A	30 A	30 A	30 A	30 A
Number of components	1	1	1	1	1
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Maximum output current	1 A	1 A	1 A	1 A	1 A
Maximum repetitive peak reverse voltage	200 V	400 V	50 V	100 V	600 V
Maximum reverse recovery time	0.2 µs	0.2 µs	0.2 µs	0.2 µs	0.2 µs
surface mount	NO	NO	NO	NO	NO

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