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1N4933

Description
1 A, 50 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size69KB,2 Pages
ManufacturerGoodwork Semiconductor ( GW )
Websitehttp://www.goodwork.com.tw/
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1N4933 Overview

1 A, 50 V, SILICON, SIGNAL DIODE

1N4933 Parametric

Parameter NameAttribute value
MakerGoodwork Semiconductor ( GW )
Reach Compliance Codeunknow
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
Maximum non-repetitive peak forward current30 A
Number of components1
Maximum operating temperature150 °C
Maximum output current1 A
Maximum repetitive peak reverse voltage50 V
Maximum reverse recovery time0.2 µs
surface mountNO
1N4933
THRU
1N4937
1.0 AMP FAST RECOVERY RECTIFIERS
VOLTAGE RANGE
50 to 600 Volts
CURRENT
FEATURES
* Low forward voltage drop
* Low leakage current
* High reliability
* High current capability
1.0 Ampere
DO-41
.107(2.7)
.080(2.0)
DIA.
1.0(25.4)
MIN.
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Lead: Axial leads, solderable per MIL-STD-202,
method 208 guranteed
* Polarity: Color band denotes cathode end
* Mounting position: Any
.034(.9)
.028(.7)
DIA.
.205(5.2)
.166(4.2)
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Length at Ta=75 C
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage at 1.0A
Maximum DC Reverse Current
Ta=25 C
at Rated DC Blocking Voltage
Ta=100 C
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range T
J
, T
STG
NOTES:
1N4933
50
35
50
1N4934
100
70
100
1N4935
200
140
200
1.0
30
1.2
5.0
100
200
15
-65 +150
1N4936
400
280
400
1N4937
600
420
600
UNITS
V
V
V
A
A
V
A
A
nS
pF
C
1. Reverse Recovery Time test condition:IF=1.0A, VR=30V.
2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
168

1N4933 Related Products

1N4933 1N4935 1N4936 1N4934 1N4937
Description 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 100 V, SILICON, SIGNAL DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
Maker Goodwork Semiconductor ( GW ) Goodwork Semiconductor ( GW ) Goodwork Semiconductor ( GW ) Goodwork Semiconductor ( GW ) Goodwork Semiconductor ( GW )
Reach Compliance Code unknow unknow unknow unknow unknow
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V
Maximum non-repetitive peak forward current 30 A 30 A 30 A 30 A 30 A
Number of components 1 1 1 1 1
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Maximum output current 1 A 1 A 1 A 1 A 1 A
Maximum repetitive peak reverse voltage 50 V 200 V 400 V 100 V 600 V
Maximum reverse recovery time 0.2 µs 0.2 µs 0.2 µs 0.2 µs 0.2 µs
surface mount NO NO NO NO NO
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