FR106G datasheet, PDF - EEWORLD Datasheet

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FR106G: Description1 A, 800 V, SILICON, SIGNAL DIODE, DO-41; CategoryDiscrete semiconductor diode; File Size63KB，2 Pages; ManufacturerGoodwork Semiconductor ( GW ); Websitehttp://www.goodwork.com.tw/

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FR106G Overview

1 A, 800 V, SILICON, SIGNAL DIODE, DO-41

FR106G Parametric

Parameter Name	Attribute value
Maker	Goodwork Semiconductor ( GW )
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.3 V
Maximum non-repetitive peak forward current	30 A
Number of components	1
Maximum operating temperature	175 °C
Maximum output current	1 A
Maximum repetitive peak reverse voltage	800 V
Maximum reverse recovery time	0.5 µs
surface mount	NO

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FR101G

THRU

FR107G

1.0

AMP GLASS PASSIVATED FAST RECOVERY RECTIFIERS

VOLTAGE RANGE

50 to 1000 Volts

CURRENT

FEATURES

* Low forward voltage drop

* High current capability

* High reliability

* High surge current capability

* Glass passivated junction

1.0 Ampere

DO-41

.107(2.7)

.080(2.0)

DIA.

1.0(25.4)

MIN.

MECHANICAL DATA

* Case: Molded plastic

* Epoxy: UL 94V-0 rate flame retardant

* Lead: Axial leads, solderable per MIL-STD-202,

method 208 guranteed

* Polarity: Color band denotes cathode end

* Mounting position: Any

.034(.9)

.028(.7)

DIA.

.205(5.2)

.166(4.2)

1.0(25.4)

MIN.

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating 25 C ambient temperature uniess otherwies specified.

Single phase half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

TYPE NUMBER

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

.375"(9.5mm) Lead Length at Ta=55 C

Peak Forward Surge Current, 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

Maximum Instantaneous Forward Voltage at 1.0A

Maximum DC Reverse Current

Ta=25 C

at Rated DC Blocking Voltage

Ta=100 C

Maximum Reverse Recovery Time (Note 1)

Typical Junction Capacitance (Note 2)

Operating and Storage Temperature Range T

, T

STG

NOTES:

FR101G FR102G FR103G FR104G FR105G FR106G FR107G

UNITS

100

200

140

200

400

280

400

1.0

1.3

5.0

100

600

420

600

800

560

800

1000

700

1000

150

-65 +150

250

500

1. Reverse Recovery Time test condition: IF=0.5A, IR=1.0A, IRR=0.25A

2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.

166

FR106G Related Products

	FR106G	FR103G	FR105G	FR107G	FR101G	FR102G	FR104G
Description	1 A, 800 V, SILICON, SIGNAL DIODE, DO-41	RECTIFIER DIODE,200V V(RRM),DO-41	1 A, 600 V, SILICON, SIGNAL DIODE, DO-41	1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41	SIGNAL DIODE, DO-41	1 A, 100 V, SILICON, SIGNAL DIODE, DO-41	1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
Reach Compliance Code	unknown	unknow	unknown	unknow	unknow	unknow	unknow
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.3 V	1.3 V	1.3 V	1.3 V	1.3 V	1.3 V	1.3 V
Maximum non-repetitive peak forward current	30 A	30 A	30 A	30 A	30 A	30 A	30 A
Number of components	1	1	1	1	1	1	1
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
Maximum output current	1 A	1 A	1 A	1 A	1 A	1 A	1 A
Maximum repetitive peak reverse voltage	800 V	200 V	600 V	1000 V	50 V	100 V	400 V
Maximum reverse recovery time	0.5 µs	0.15 µs	0.25 µs	0.5 µs	0.15 µs	0.15 µs	0.15 µs
surface mount	NO	NO	NO	NO	NO	NO	NO
Maker	Goodwork Semiconductor ( GW )	-	Goodwork Semiconductor ( GW )	Goodwork Semiconductor ( GW )	Goodwork Semiconductor ( GW )	Goodwork Semiconductor ( GW )	Goodwork Semiconductor ( GW )

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