J309 / J310 / MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier
December 2010
J309 / J310 / MMBFJ309 / MMBFJ310
N-Channel RF Amplifier
Features
•
•
•
•
This device is designed for VHF/UHF amplifier, oscillator and mixer applications.
As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized.
Sourced from Process 92.
Source & Drain are interchangeable.
J309
J310
MMBFJ309
MMBFJ310
G
S
G
S
TO-92
D
SOT-23
D
Mark MMBFJ309 : 6U
MMBFJ310 : 6T
Absolute Maximum Ratings *
T
a
= 25°C unless otherwise noted
Symbol
V
DS
V
GS
I
GF
T
J,
T
stg
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
Parameter
Value
25
-25
10
- 55 to +150
Units
V
V
mA
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
T
a
= 25°C unless otherwise noted
Parameter
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
J309-J310 *MMBFJ309-310
625
5.0
127
357
556
350
2.8
Units
mW
mW/°C
°C/W
°C/W
* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".
© 2010 Fairchild Semiconductor Corporation
J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1
1
www.fairchildsemi.com
J309 / J310 / MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier
Electrical Characteristics
Symbol
Off Characteristics
T
a
= 25°C unless otherwise noted
Parameter
Test Condition
Min.
-25
Typ.
Max.
Units
V
BV
(BR)GSS
Gate-Source Breakdown Voltage I
G
= -1.0μA, V
DS
= 0
I
GSS
V
GS(off)
Gate Reverse Current
Gate-Source Cutoff Voltage
V
GS
= -15V, V
DS
= 0
V
GS
= -15V, V
DS
= 0, T
a
= 125°C
V
DS
= 10V, I
D
= 1.0nA
309
310
309
310
-1.0
-1.0
-1.0
-2.0
12
24
-4.0
-6.5
30
60
1.0
nA
μA
V
V
mA
mA
V
On Characteristics
I
DSS
V
GS(f)
Re
(yis)
Zero-Gate Voltage Drain
Current*
Gate-Source Forward Voltage
Common-Source Input
Conductance
Common-Source Output
Conductance
Common-Gate Power Gain
Common-Source Forward
Transconductance
Common-Gate Input
Conductance
Common-Source Forward
Transconductance
Common-Source Output
Conductance
Common-Gate Forward
Conductance
Common-Gate Output
Conductance
Drain-Gate Capacitance
Source-Gate Capacitance
Noise Figure
Equivalent Short-Circuit Input
Noise Voltage
V
DS
= 10V, V
GS
= 0
V
DS
= 0, I
G
= 1.0mA
V
DS
= 10V, I
D
= 10mA, f = 100MHz
309
310
V
DS
= 10V, I
D
= 10mA, f = 100MHz
V
DS
= 10V, I
D
= 10mA, f = 100MHz
V
DS
= 10V, I
D
= 10mA, f = 100MHz
V
DS
= 10V, I
D
= 10mA, f = 100MHz
V
DS
= 10V, I
D
= 10mA, f = 1.0kHz
309
10,000
310
8,000
V
DS
= 10V, I
D
= 10mA, f = 1.0kHz
V
DS
= 10V, I
D
= 10mA, f = 1.0kHz
309
310
V
DS
= 10V, I
D
= 10mA, f = 1.0kHz
309
310
V
DS
= 0, V
GS
= -10V, f = 1.0MHz
V
DS
= 0, V
GS
= -10V, f = 1.0MHz
V
DS
= 10V, I
D
= 10mA, f = 450MHz
V
DS
= 10V, I
D
= 10mA, f = 100Hz
Small Signal Characteristics
0.7
0.5
0.25
16
12
12
mmhos
mmhos
mmhos
dB
mmhos
mmhos
Re
(yos)
G
pg
Re
(yfs
)
Re
(yig)
g
fs
20,000
μmhos
18,000
μmhos
150
μmhos
g
oss
g
fg
13,000
12,000
100
150
2.0
4.1
3.0
6.0
2.5
5.0
μmhos
μmhos
μmhos
μmhos
pF
pF
dB
nV/ Hz
g
og
C
dg
C
sg
NF
e
n
* Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2.0%
© 2010 Fairchild Semiconductor Corporation
J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1
2
www.fairchildsemi.com
J309 / J310 / MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier
Typical Performance Characteristics
Transfer Characteristics
Transfer Characteristics
Transfer Characteristics
Transfer Characteristics
Input Admittance
Forward Transadmittance
© 2010 Fairchild Semiconductor Corporation
J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1
3
www.fairchildsemi.com
J309 / J310 / MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier
Typical Performance Characteristics
(continued)
Output Conductance vs.
Drain Current
Common Drain-Source
Output Admittance
Capacitance vs. Voltage
Noise Voltage vs. Frequency
Reverse Transadmittance
© 2010 Fairchild Semiconductor Corporation
J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1
4
www.fairchildsemi.com
J309 / J310 / MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier
Typical Performance Characteristics
(continued)
Parameter Interactions
Transconductance vs.
Drain Current
Leakage Current vs. Voltage
Power Dissipation vs
Ambient Temperature
P
D
- POWER DISSIPATION (mW)
700
600
500
400
300
200
100
0
0
25
50
75
100
TEMPERATURE (
o
C)
125
150
TO-92
SOT-23
© 2010 Fairchild Semiconductor Corporation
J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1
5
www.fairchildsemi.com
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