DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D252
BGY888
860 MHz, 34 dB gain push-pull
amplifier
Product specification
Supersedes data of 1999 Mar 30
2001 Oct 25
Philips Semiconductors
Product specification
860 MHz, 34 dB gain push-pull amplifier
FEATURES
•
Excellent linearity
•
Extremely low noise
•
High gain
•
Excellent return loss properties.
APPLICATIONS
•
Single module line extender in CATV systems operating
over a frequency range of 40 to 860 MHz.
handbook, halfpage
BGY888
PINNING SOT115J
PIN
1
2, 3
5
7, 8
9
input
common
+V
B
common
output
DESCRIPTION
DESCRIPTION
Hybrid high dynamic range amplifier module operating
with a voltage supply of 24 V in a SOT115J package. The
high gain module consists of two cascaded stages both in
cascode configuration.
1
2
3
5
7
8
9
Side view
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
G
p
I
tot
power gain
total current consumption (DC)
PARAMETER
f = 50 MHz
f = 860 MHz
V
B
= 24 V
CONDITIONS
MIN.
33.5
34
−
−
340
MAX.
34.5
UNIT
dB
dB
mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
i
T
stg
T
mb
RF input voltage
storage temperature
operating mounting base temperature
PARAMETER
−
−40
−20
MIN.
MAX.
55
+100
+100
UNIT
dBmV
°C
°C
2001 Oct 25
2
Philips Semiconductors
Product specification
860 MHz, 34 dB gain push-pull amplifier
CHARACTERISTICS
Table 1
Bandwidth 40 to 860 MHz; V
B
= 24 V; T
case
= 30
°C;
Z
S
= Z
L
= 75
Ω
PARAMETER
power gain
slope cable equivalent
flatness of frequency response
input return losses
f = 50 MHz
f = 860 MHz
SL
FL
S
11
f = 40 to 860 MHz
f = 40 to 860 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 640 MHz
f = 640 to 860 MHz
S
22
output return losses
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 640 MHz
f = 640 to 860 MHz
S
21
CTB
X
mod
CSO
d
2
V
o
F
phase response
composite triple beat
cross modulation
composite second order
distortion
second order distortion
output voltage
noise figure
f = 50 MHz
49 channels flat; V
o
= 44 dBmV;
measured at 859.25 MHz
49 channels flat; V
o
= 44 dBmV;
measured at 55.25 MHz
49 channels flat; V
o
= 44 dBmV;
measured at 860.5 MHz
note 1
d
im
=
−60
dB; note 2
f = 50 MHz
f = 550 MHz
f = 600 MHz
f = 650 MHz
f = 750 MHz
f = 860 MHz
I
tot
Notes
1. f
p
= 55.25 MHz; V
p
= 44 dBmV;
f
q
= 805.25 MHz; V
q
= 44 dBmV;
measured at f
p
+ f
q
= 860.5 MHz.
2. Measured according to DIN45004B:
f
p
= 851.25 MHz; V
p
= V
o
;
f
q
= 858.25 MHz; V
q
= V
o
−6
dB;
f
r
= 860.25 MHz; V
r
= V
o
−6
dB;
measured at f
p
+ f
q
−
f
r
= 849.25 MHz.
3. The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
2001 Oct 25
3
total current consumption (DC)
note 3
CONDITIONS
MIN.
33.5
34
0.5
−
20
18.5
17
15.5
14
20
18.5
17
15.5
14
135
−
−
−
−
58
−
−
−
−
−
−
−
TYP.
34
35
1.1
±0.2
25
28
28
21
18.5
25.5
28.5
26.5
20.5
21
−
−63.5
−63
−64
−74
60
4
−
−
−
−
5.5
325
BGY888
SYMBOL
G
p
MAX.
34.5
−
2.5
±0.5
−
−
−
−
−
−
−
−
−
−
225
−60
−59
−55
−65
−
4.5
5
5
5.5
6
7
340
UNIT
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
dB
dB
dB
dBmV
dB
dB
dB
dB
dB
dB
mA
Philips Semiconductors
Product specification
860 MHz, 34 dB gain push-pull amplifier
Table 2
Bandwidth 40 to 860 MHz; V
B
= 24 V; T
case
= 30
°C;
Z
S
= Z
L
= 75
Ω
PARAMETER
power gain
slope cable equivalent
flatness of frequency response
input return losses
f = 50 MHz
f = 860 MHz
SL
FL
S
11
f = 40 to 860 MHz
f = 40 to 860 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 640 MHz
f = 640 to 860 MHz
S
22
output return losses
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 640 MHz
f = 640 to 860 MHz
S
21
CTB
X
mod
CSO
d
2
V
o
F
I
tot
Notes
1. f
p
= 55.25 MHz; V
p
= 44 dBmV;
f
q
= 805.25 MHz; V
q
= 44 dBmV;
measured at f
p
+ f
q
= 860.5 MHz.
2. Measured according to DIN45004B:
f
p
= 851.25 MHz; V
p
= V
o
;
f
q
= 858.25 MHz; V
q
= V
o
−6
dB;
f
r
= 860.25 MHz; V
r
= V
o
−6
dB;
measured at f
p
+ f
q
−
f
r
= 849.25 MHz.
3. The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
phase response
composite triple beat
cross modulation
composite second order
distortion
second order distortion
output voltage
noise figure
total current consumption (DC)
f = 50 MHz
129 channels flat; V
o
= 44 dBmV;
measured at 859.25 MHz
129 channels flat; V
o
= 44 dBmV;
measured at 55.25 MHz
129 channels flat; V
o
= 44 dBmV;
measured at 860.5 MHz
note 1
d
im
=
−60
dB; note 2
see Table 1
note 3
CONDITIONS
MIN.
33.5
34
0.5
−
20
18.5
17
15.5
14
20
18.5
17
15.5
14
135
−
−
−
−
58
−
−
TYP.
34
35
1.1
±0.2
25
28
28
21
18.5
25.5
28.5
26.5
20.5
21
−
−47.5
−53.5
−56
−74
60
−
325
BGY888
SYMBOL
G
p
MAX.
34.5
−
2.5
±0.5
−
−
−
−
−
−
−
−
−
−
225
−46
−50
−48
−65
−
−
340
UNIT
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
dB
dB
dB
dBmV
dB
mA
2001 Oct 25
4
Philips Semiconductors
Product specification
860 MHz, 34 dB gain push-pull amplifier
Table 3
Bandwidth 40 to 750 MHz; V
B
= 24 V; T
case
= 30
°C;
Z
S
= Z
L
= 75
Ω
PARAMETER
power gain
slope cable equivalent
flatness of frequency response
input return losses
f = 50 MHz
f = 750 MHz
SL
FL
S
11
f = 40 to 750 MHz
f = 40 to 750 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 640 MHz
f = 640 to 750 MHz
S
22
output return losses
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 640 MHz
f = 640 to 750 MHz
S
21
CTB
X
mod
CSO
d
2
V
o
F
I
tot
Notes
1. f
p
= 55.25 MHz; V
p
= 44 dBmV;
f
q
= 691.25 MHz; V
q
= 44 dBmV;
measured at f
p
+ f
q
= 746.5 MHz.
2. Measured according to DIN45004B:
f
p
= 740.25 MHz; V
p
= V
o
;
f
q
= 747.25 MHz; V
q
= V
o
−6
dB;
f
r
= 749.25 MHz; V
r
= V
o
−6
dB;
measured at f
p
+ f
q
−
f
r
= 738.25 MHz.
3. The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
phase response
composite triple beat
cross modulation
composite second order
distortion
second order distortion
output voltage
noise figure
total current consumption (DC)
f = 50 MHz
110 channels flat; V
o
= 44 dBmV;
measured at 745.25 MHz
110 channels flat; V
o
= 44 dBmV;
measured at 55.25 MHz
110 channels flat; V
o
= 44 dBmV;
measured at 746.5 MHz
note 1
d
im
=
−60
dB; note 2
see Table 1
note 3
CONDITIONS
MIN.
33.5
34
0.2
−
20
18.5
17
15.5
14
20
18.5
17
15.5
14
135
−
−
−
−
59
−
−
TYP.
34
−
−
−
25
28
28
21
18.5
25.5
28.5
26.5
20.5
21
−
−52.5
−55.5
−61.5
−
−
−
325
BGY888
SYMBOL
G
p
MAX.
34.5
−
2.2
±0.45
−
−
−
−
−
−
−
−
−
−
225
−50
−51
−53
−65
−
−
340
UNIT
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
dB
dB
dB
dBmV
dB
mA
2001 Oct 25
5
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