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US1A

Description
1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC
Categorysemiconductor    Discrete semiconductor   
File Size88KB,1 Pages
ManufacturerMAKO
Websitehttp://www.makosemi.hk
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US1A Overview

1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC

MAKO SEMICONDUCTOR CO.,LIMITED
US1A THRU US1M
SURFACE MOUNT ULTRA
FAST SWITCHING RECTIFIER
VOLTAGE: 50 TO 1000V CURRENT: 1.0A
FEATURES
• Ideal for surface mount pick and
place application
• Low profile package
• Built-in strain relief
• High surge capability
• Glass passivated chip
• Ultra fast recovery for high efficiency
• High temperature soldering guaranteed:
260
o
C/10sec/at terminal
TECHNICAL
SPECIFICATION
SMA/DO-214AC
B
A
C
D
F
G
A
B
MAX. .110(2.79) .177(4.50)
MIN. .100(2.54) .157(3.99)
E
F
MAX. .208(5.28) .090(2.29)
MIN. .194(4.93) .078(1.98)
MECHANICAL DATA
• Terminal: Plated leads solderable per
MIL-STD 202E, method 208C
• Case: Molded with UL-94 Class V-O
recognized flame retardant epoxy
• Polarity: Color band denotes cathode
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25
o
C, unless otherwise stated, for capacitive load,
derate current by 20%)
V
RRM
Maximum Repetitive Peak Reverse Voltage
V
RMS
Maximum RMS Voltage
V
DC
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
I
F(AV)
1.0
(T
L
=100
o
C)
Peak Forward Surge Current (8.3ms single
I
FSM
30
half sine-wave superimposed on rated load)
Maximum Instantaneous Forward Voltage
V
F
1.0
1.4
(at rated forward current)
5.0
Maximum DC Reverse Current
T
a
=25
o
C
I
R
200
(at rated DC blocking voltage)
T
a
=100
o
C
50
Maximum Reverse Recovery Time
(Note 1)
trr
20
C
J
Typical Junction Capacitance
(Note 2)
32
R
θ
(ja)
Typical Thermal Resistance
(Note 3)
-50 to +150
T
STG
,T
J
Storage and Operation Junction Temperature
Note:
1.Reverse recovery condition I
F
=0.5A, I
R
=1.0A,Irr=0.25A.
2.Measured at 1.0 MHz and applied voltage of 4.0V
dc
3.Thermal resistance from junction to terminal mounted on 5×5mm copper pad area
M
O
AK
RATINGS
SE
H
C
D
.058(1.47) .012(0.305)
.052(1.32) .006(0.152)
G
H
.008(0.203) .060(1.52)
.004(0.102) .030(0.76)
IC
M
O
N
D
SYMBOL
Dimensions in inches and (illimeters)
U
CT
US
1A
50
35
50
O
US
1B
100
70
100
US
1D
200
140
200
US
1G
400
280
400
US
1J
600
420
600
US US
UNITS
1K 1M
800 1000
V
560 700
V
800 1000
V
A
A
V
µA
µA
nS
pF
C/W
o
C
R
CO
.,L
http://www.makosemi.hk/
IM
1.7
E
IT
D
o
75
10

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US1A US1M
Description 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 1000 V, SILICON, SIGNAL DIODE

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