DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
BAP65-02
Silicon PIN diode
Product specification
Supersedes data of 2001 May 07
2001 May 11
Philips Semiconductors
Product specification
Silicon PIN diode
FEATURES
•
High voltage, current controlled
•
RF resistor for RF switches
•
Low diode capacitance
•
Low diode forward resistance (low loss)
•
Very low series inductance.
APPLICATIONS
handbook, halfpage
BAP65-02
PINNING
PIN
1
2
DESCRIPTION
cathode
anode
•
RF attenuators and switches
•
Bandswitch for TV tuners
•
Series diode for mobile communication transmit/receive
switch.
DESCRIPTION
Planar PIN diode in a SOD523 ultra small SMD plastic
package.
Marking code:
K6.
Fig.1 Simplified outline (SOD523) and symbol.
1
2
Top view
MAM405
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
R
I
F
P
tot
T
stg
T
j
PARAMETER
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
T
s
≤
90
°C
CONDITIONS
−
−
−
−65
−65
MIN.
MAX.
30
100
715
+150
+150
UNIT
V
mA
mW
°C
°C
2001 May 11
2
Philips Semiconductors
Product specification
Silicon PIN diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
I
R
C
d
PARAMETER
forward voltage
reverse leakage current
diode capacitance
CONDITIONS
I
F
= 50 mA
V
R
= 20 V
V
R
= 0 V; f = 1 MHz
V
R
= 1 V; f = 1 MHz
V
R
= 3 V; f = 1 MHz
V
R
= 20 V; f = 1 MHz
r
D
diode forward resistance
I
F
= 1 mA; f = 100 MHz
I
F
= 5 mA; f = 100 MHz; note 1
I
F
= 10 mA; f = 100 MHz; note 1
I
F
= 100 mA; f = 100 MHz
|s
21
|
2
isolation
V
R
= 0; f = 900 MHz
V
R
= 0; f = 1800 MHz
V
R
= 0; f = 2450 MHz
|s
21
|
2
insertion loss
I
F
= 1 mA; f = 900 MHz
I
F
= 1 mA; f = 1800 MHz
I
F
= 1 mA; f = 2450 MHz
|s
21
|
2
insertion loss
I
F
= 5 mA; f = 900 MHz
I
F
= 5 mA; f = 1800 MHz
I
F
= 5 mA; f = 2450 MHz
|s
21
|
2
insertion loss
I
F
= 10 mA; f = 900 MHz
I
F
= 10 mA; f = 1800 MHz
I
F
= 10 mA; f = 2450 MHz
|s
21
|
2
insertion loss
I
F
= 100 mA; f = 900 MHz
I
F
= 100 mA; f = 1800 MHz
I
F
= 100 mA; f = 2450 MHz
τ
L
charge carrier life time
−
0.65
0.55
0.5
0.375
1
0.65
0.56
0.35
10
5.8
4.4
0.11
0.13
0.16
0.08
0.11
0.13
0.07
0.1
0.13
0.07
0.1
0.128
TYP.
0.9
BAP65-02
MAX.
1.1
20
−
0.9
0.8
−
−
0.95
0.9
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
V
UNIT
nA
pF
pF
pF
pF
Ω
Ω
Ω
Ω
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
µs
when switched from I
F
= 10 mA to 0.17
I
R
= 6 mA; R
L
= 100
Ω;
measured at I
R
= 3 mA
I
F
= 100 mA; f = 100 MHz
0.6
L
S
Note
series inductance
−
nH
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to soldering point
VALUE
85
UNIT
K/W
2001 May 11
3
Philips Semiconductors
Product specification
Silicon PIN diode
GRAPHICAL DATA
BAP65-02
handbook, halfpage
10
MLD499
rD
(Ω)
1000
handbook, halfpage
Cd
(fF)
800
MLD500
600
1
400
200
10
−1
10
−1
1
10
IF (mA)
10
2
0
0
4
8
12
16
VR (V)
20
f = 100 MHz; T
j
= 25
°C.
f = 1 MHz; T
j
= 25
°C.
Fig.2
Forward resistance as a function of forward
current; typical values.
Fig.3
Diode capacitance as a function of reverse
voltage; typical values.
handbook, halfpage
s
2
0
MLD501
handbook, halfpage
(5)
0
MLD502
21
(
dB
)
s21
2
(
dB
)
−0.1
−10
(1)
(2)
(3)
(4)
−0.2
−20
−0.3
−30
−0.4
−0.5
0
1000
(4) I
F
= 10 mA.
(5) I
F
= 100 mA.
2000
f (MHz)
3000
−40
0
1000
2000
f (MHz)
3000
(1) I
F
= 0.5 mA.
(2) I
F
= 1 mA.
(3) I
F
= 5 mA.
Diode inserted in series with a 50
Ω
stripline circuit and biased
via the analyzer Tee network. T
amb
= 25
°C.
Diode zero biased and inserted in series with a 50
Ω
stripline circuit.
T
amb
= 25
°C.
Fig.4
Insertion loss (|s
21
|
2
) of the diode as a
function of frequency; typical values.
Fig.5
Isolation (|s
21
|
2
) of the diode as a function of
frequency; typical values.
2001 May 11
4
Philips Semiconductors
Product specification
Silicon PIN diode
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
BAP65-02
SOD523
A
c
HE
v
M
A
D
A
0
0.5
scale
1 mm
1
E
bp
2
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
0.7
0.5
bp
0.35
0.25
c
0.2
0.1
D
1.3
1.1
E
0.9
0.7
HE
1.7
1.5
v
0.15
(1)
Note
1. The marking bar indicates the cathode.
OUTLINE
VERSION
SOD523
REFERENCES
IEC
JEDEC
EIAJ
SC-79
EUROPEAN
PROJECTION
ISSUE DATE
98-11-25
2001 May 11
5
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