FST10080 datasheet, PDF - EEWORLD Datasheet

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FST10080: DescriptionSilicon Power Schottky Diode; CategoryDiscrete semiconductor diode; File Size357KB，3 Pages; ManufacturerGeneSiC; Websitehttp://www.genesicsemi.com/

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FST10080 Overview

Silicon Power Schottky Diode

FST10080 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Maker	GeneSiC
Reach Compliance Code	compli
application	POWER
Shell connection	ISOLATED
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.84 V
JEDEC-95 code	TO-249AB
JESD-30 code	R-PSFM-D3
Maximum non-repetitive peak forward current	1000 A
Number of components	2
Phase	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	50 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Maximum repetitive peak reverse voltage	80 V
Maximum reverse current	1000 µA
surface mount	NO
technology	SCHOTTKY
Terminal form	SOLDER LUG
Terminal location	SINGLE

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FST10045 thru FST100100

Silicon Power

Schottky Diode

Features

• High Surge Capability

• Types from 45 V to 100V V

RRM

• Isolated to Plate

• Not ESD Sensitive

TO-249AB Package

V

RRM

= 45 V - 100 V

I

F(AV)

= 100 A

Maximum ratings, at T

j

= 25 °C, unless otherwise specified

Parameter

Repetitive peak reverse voltage

RMS reverse voltage

DC blocking voltage

Operating temperature

Storage temperature

Symbol

V

RRM

V

RMS

V

DC

T

j

T

stg

Conditions

FST10045

45

32

45

-55 to 150

FST10060

60

42

60

-55 to 150

FST10080

80

57

80

-55 to 150

FST100100

100

70

100

-55 to 150

Unit

V

°C

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Average forward current (per

pkg)

Peak forward surge current (per

leg)

Maximum instantaneous

forward voltage (per leg)

Maximum Instantaneous

reverse current at rated DC

blocking voltage (per leg)

Symbol

I

F(AV)

I

FSM

V

F

I

R

Conditions

T

C

= 125 °C

t

p

= 8.3 ms, half sine

I

FM

= 50 A, T

j

= 25 °C

T

j

= 25 °C

T

j

= 100 °C

T

j

= 150 °C

FST10045

100

1000

0.70

1

10

30

1.0

FST10060

100

1000

0.75

1

10

30

1.0

FST10080

100

1000

0.84

1

10

30

1.0

FST100100

100

1000

0.84

1

10

30

1.0

Unit

A

V

mA

Thermal characteristics

Thermal resistance, junction -

case (per leg)

R

ΘJC

°C/W

www.genesicsemi.com/silicon-products/schottky-rectifiers/

1

FST10080 Related Products

	FST10080	FST100100	FST10060
Description	Silicon Power Schottky Diode	Silicon Power Schottky Diode	Silicon Power Schottky Diode
Is it lead-free?	Lead free	Lead free	Lead free
Maker	GeneSiC	GeneSiC	GeneSiC
Reach Compliance Code	compli	compli	compli
application	POWER	POWER	POWER
Shell connection	ISOLATED	ISOLATED	ISOLATED
Configuration	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	0.84 V	0.84 V	0.75 V
JEDEC-95 code	TO-249AB	TO-249AB	TO-249AB
JESD-30 code	R-PSFM-D3	R-PSFM-D3	R-PSFM-D3
Maximum non-repetitive peak forward current	1000 A	1000 A	1000 A
Number of components	2	2	2
Phase	1	1	1
Number of terminals	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C
Maximum output current	50 A	50 A	50 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Maximum repetitive peak reverse voltage	80 V	100 V	60 V
Maximum reverse current	1000 µA	1000 µA	1000 µA
surface mount	NO	NO	NO
technology	SCHOTTKY	SCHOTTKY	SCHOTTKY
Terminal form	SOLDER LUG	SOLDER LUG	SOLDER LUG
Terminal location	SINGLE	SINGLE	SINGLE

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