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FST6315M

Description
Silicon Power Schottky Diode
CategoryDiscrete semiconductor    diode   
File Size534KB,3 Pages
ManufacturerGeneSiC
Websitehttp://www.genesicsemi.com/
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FST6315M Overview

Silicon Power Schottky Diode

FST6315M Parametric

Parameter NameAttribute value
MakerGeneSiC
package instructionR-PSFM-T3
Reach Compliance Codecompli
ECCN codeEAR99
applicationPOWER
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.7 V
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current600 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current30 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage15 V
Maximum reverse current1000 µA
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
FST6310M thru FST6335M
Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 10 V to 40 V V
RRM
• Not ESD Sensitive
D61-3M Package
V
RRM
= 10 V - 40 V
I
F(AV)
= 60 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified
Parameter
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
T
j
T
stg
Conditions
FST6310M FST6315M FST6320M FST6330M FST6335M
10
7
10
-55 to 150
-55 to 150
Unit
V
V
V
°C
°C
15
11
20
14
20
-55 to 150
-55 to 150
30
21
35
25
35
-55 to 150
-55 to 150
15
-55 to 150
-55 to 150
30
-55 to 150
-55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Average forward current (per
pkg)
Peak forward surge current
(per leg)
Maximum instantaneous
forward voltage (per leg)
Maximum Instantaneous
reverse current at rated DC
blocking voltage (per leg)
Symbol
I
F(AV)
I
FSM
V
F
I
R
Conditions
T
C
= 125 °C
t
p
= 8.3 ms, half sine
I
FM
= 30 A, T
j
= 25 °C
T
j
= 25 °C
T
j
= 100 °C
T
j
= 150 °C
FST6310M FST6315M FST6320M FST6330M FST6335M
60
600
0.70
1
10
30
60
600
7.0
1
10
30
60
600
0.70
1
10
30
60
600
0.70
1
10
30
60
600
0.70
1
10
30
Unit
A
A
V
mA
Thermal characteristics
Thermal resistance, junction -
case (per leg)
R
ΘJC
1.20
1.20
1.20
1.20
1.20
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
1

FST6315M Related Products

FST6315M FST6330M
Description Silicon Power Schottky Diode Silicon Power Schottky Diode
Maker GeneSiC GeneSiC
Reach Compliance Code compli compli
application POWER POWER
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.7 V 0.7 V
JESD-30 code R-PSFM-T3 R-PSFM-T3
Maximum non-repetitive peak forward current 600 A 600 A
Number of components 2 2
Phase 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C
Maximum output current 30 A 30 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Maximum repetitive peak reverse voltage 15 V 30 V
Maximum reverse current 1000 µA 1000 µA
surface mount NO NO
technology SCHOTTKY SCHOTTKY
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE

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