P6KE9V1P datasheet, PDF - EEWORLD Datasheet

P6KE9V1P: Description600W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CB417, 2 PIN; CategoryDiscrete semiconductor diode; File Size71KB，1 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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P6KE9V1P Overview

600W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CB417, 2 PIN

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	STMicroelectronics
package instruction	O-PALF-W2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	UL RECOGNIZED
Maximum breakdown voltage	10 V
Minimum breakdown voltage	8.65 V
Breakdown voltage nominal value	9.1 V
Shell connection	ISOLATED
Maximum clamping voltage	17.1 V
Configuration	SINGLE
Minimum diode capacitance	3100 pF
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	O-PALF-W2
JESD-609 code	e0
Maximum non-repetitive peak reverse power dissipation	600 W
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
polarity	UNIDIRECTIONAL
Maximum power dissipation	5 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	7.8 V
Maximum reverse current	50 µA
surface mount	NO
technology	AVALANCHE
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	AXIAL

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