AP9465AGH/J
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼
Lower Gate Charge
▼
Simple Drive Requirement
▼
Fast Switching Characteristic
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
40V
32mΩ
15A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications.
The through-hole version (AP9465AGJ) are available for low-profile
applications.
G
□
D
S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
40
+20
15
9.8
50
12.5
0.1
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value
10.0
62.5
110
Units
℃/W
℃/W
℃/W
1
200903092
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
AP9465AGH/J
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=12A
V
GS
=4.5V, I
D
=8A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=12A
V
DS
=40V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=12A
V
DS
=32V
V
GS
=4.5V
V
DS
=20V
I
D
=12A
R
G
=3.3Ω,V
GS
=10V
R
D
=1.67Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Min.
40
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
16
-
-
-
8
1.7
4.7
5
23
17
3.3
485
55
50
Max. Units
-
32
45
3
-
1
250
+100
13
-
-
-
-
-
-
780
-
-
V
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Drain-Source Leakage Current (T
j
=125
o
C)
V
DS
=32V, V
GS
=0V
Source-Drain Diode
Symbol
V
SD
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Test Conditions
I
S
=12A, V
GS
=0V
I
S
=12A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
19
13
Max. Units
1.2
-
-
V
ns
nC
t
rr
Q
rr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9465AGH/J
50
40
T
C
=25 C
40
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
10V
7.0 V
5.0V
4.5 V
T
C
=150
o
C
30
10V
7 .0V
5.0V
4.5 V
30
20
20
V
G
=3.0V
10
V
G
= 3.0 V
10
0
0.0
1.0
2.0
3.0
4.0
5.0
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
40
2.0
I
D
=12A
T
C
=25 C
36
1.6
o
I
D
=12A
V
G
=10V
Normalized R
DS(ON)
R
DS(ON)
(m
Ω
)
32
1.2
28
0.8
24
20
2
4
6
8
10
0.4
-50
0
50
100
150
200
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
20
16
12
I
S
(A)
o
T
j
=150 C
T
j
=25
o
C
Normalized V
GS(th)
(V)
1.6
1.2
0.8
8
0.4
4
0
0
0.4
0.8
1.2
0.0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9465AGH/J
16
1000
f=1.0MHz
V
GS
, Gate to Source Voltage (V)
I
D
=12A
12
C
iss
C (pF)
V
DS
=20V
V
DS
=24V
V
DS
=32V
8
100
C
oss
C
rss
4
0
0
4
8
12
16
20
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor = 0.5
10
Normalized Thermal Response (R
thjc
)
0.2
I
D
(A)
100us
0.1
0.1
0.05
P
DM
0.02
1
1ms
T
C
=25
o
C
Single Pulse
10ms
100ms
DC
10
100
t
T
0.01
Single Pulse
Duty Factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0
0.1
1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
40
V
DS
=5V
V
G
Q
G
4.5V
Q
GS
Q
GD
I
D
, Drain Current (A)
30
T
j
=25 C
o
T
j
=150 C
o
20
10
Charge
0
Q
0
1
2
3
4
5
6
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
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