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AP4521GEM_14

Description
Simple Drive Requirement
File Size112KB,7 Pages
ManufacturerAPEC
Download Datasheet View All

AP4521GEM_14 Overview

Simple Drive Requirement

AP4521GEM
Pb Free Plating Product
Advanced Power
Electronics Corp.
Simple Drive Requirement
Fast Switching Performance
RoHS Compliant
D1
D2
D1
D2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-CH BV
DSS
R
DS(ON)
I
D
G2
S2
G1
40V
36mΩ
5.8A
-40V
72mΩ
-4.1A
P-CH BV
DSS
R
DS(ON)
I
D
SO-8
S1
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
D1
G1
G2
D2
S1
S2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
3
3
Rating
N-channel
40
±16
5.8
4.7
20
2
0.016
-55 to 150
-55 to 150
P-channel
-40
±20
-4.2
-3.3
-20
Units
V
V
A
A
A
W
W/℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
3
Value
Max.
62.5
Unit
℃/W
Data and specifications subject to change without notice
200629062-1/7
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