MITSUBISHI SEMICONDUTOR <GaAs FET>
PRELIMINARY
MGF1951
MGF1951A
Medium Power Microwave MESFET
DESCRIPTION
The MGF1951A is a 20mW MESFET for S- to Ku-band
driver amplifiers and oscillators.
Its lead-less ceramic package assures minimum parasitics.
FEATURES
• High Gain and High Output Power
G
LP
=9dB, P
1dB
=13dBm (typ) @ f=12GHz
• Leadless Ceramic Package
APPLICATION
S- to Ku-Band Driver Amplifiers and Oscillators
QUALITY
General Grade
ORDERING INFORMATION
Part Number
MGF1951A-01
Quantity
3.000 pcs/reel
Supply Form
Tape & Reel
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the
maximum effort into making semiconductor
products better and more reliable, but there is
always the possibility that trouble may occur
with them. Trouble with semiconductors may
lead to personal injury, fire or property
damage.
Remember
to
give
due
consideration to safety when making your
circuit designs, with appropriate measure
such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or
(iii) prevention against any malfunction or
mishap.
ABSOLUTE MAXIMUM RATINGS
(T
a
=+25°C)
Symbol
V
GDO
V
GSO
I
D
P
T
T
ch
T
stg
Parameter
Gate to Drain Voltage
Gate to Source Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Rating
-8
-8
120
300
125
-65 to +125
Unit
V
V
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS
(T
a
=+25°C)
Symbol
I
DSS
V
GS(off)
P
1dB
G
LP
Parameter
Saturated Drain Current
Gate to Source Cut-off Voltage
Output Power at
1dB Gain Compression
Linear Power Gain
Test Conditions
I
G
=-30µA
V
DS
=3V, V
GS
=0V
V
DS
=3V, I
D
=300µA
V
DS
=3V, I
D
=30mA, f=12GHz
V
DS
=3V, I
D
=30mA, P
in
=-5dBm,
f=12GHz
MIN
-8
35
-0.3
11
7
TYP
-15
60
-1.4
13
9
MAX
—
120
-3.5
—
—
Unit
V
mA
V
dBm
dB
V
(BR)GDO
Gate to Drain Breakdown Voltage
MITSUBISHI
(1/4)
1 Aug 2002
MITSUBISHI SEMICONDUTOR <GaAs FET>
PRELIMINARY
MGF1951
MGF1951A
Medium Power Microwave MESFET
TYPICAL CHARACTERISTICS
(T
a
=+25°C)
DRAIN CURRENT vs DRAIN VOLTAGE
80
70
V
GS
=0V
80
V
DS
=3V
70
DRAIN CURRENT vs GATE VOLTAGE
Drain Current I
D
(mA)
Drain Current I
D
(mA)
60
50
40
30
20
10
0
0
1
2
3
4
-0.2V/step
60
50
40
30
20
10
0
-2.0
-1.5
-1.0
-0.5
0
Drain to Source Voltage V
DS
(V)
OUTPUT POWER vs INPUT POWER
20
Gate to Source Voltage V
GS
(V)
Output Power P
out
(dBm)
V
DS
=3V
I
D
=30mA
f=12GHz
15
10
5
0
-10
-5
0
5
10
Input Power P
in
(dBm)
MITSUBISHI
(3/4)
1 Aug 2002
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