APT60GT60BR
APT60GT60BR
600V
100A
Thunderbolt IGBT
The Thunderbolt IGBT
™
is a new generation of high voltage power IGBTs.
Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior
ruggedness and ultrafast switching speed.
TO-247
• Low Forward Voltage Drop
• Low Tail Current
• Avalanche Rated
MAXIMUM RATINGS
Symbol
V
CES
V
CGR
V
GE
I
C1
I
C2
I
CM
I
LM
E
AS
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
• High Freq. Switching to 150KHz
• Ultra Low Leakage Current
• RBSOA and SCSOA Rated
G
C
C
E
G
E
All Ratings: T
C
= 25°C unless otherwise specified.
APT60GT60BR
UNIT
600
600
±20
4
Collector-Gate Voltage (R
GE
= 20KΩ)
Gate Emitter Voltage
Continuous Collector Current @ T
C
= 25°C
Volts
100
60
Amps
Continuous Collector Current @ T
C
= 105°C
Pulsed Collector Current
1
@ T
C
= 25°C
360
360
65
500
-55 to 150
300
m
J
Watts
°C
RBSOA Clamped Inductive Load Current R
G
= 11Ω T
C
= 25°C
Single Pule Avalanche Energy
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
2
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
CES
V
GE
(TH)
V
CE
(ON)
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 0.5mA)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 500µA, T
j
= 25°C)
MIN
TYP
MAX
UNIT
600
3
1.6
4
2.2
5
2.5
2.8
80
2000
±100
µA
nA
Rev B 7-2002
052-6223
Volts
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= I
C2
, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= I
C2
, T
j
= 125°C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25°C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 125°C)
Gate-Emitter Leakage Current (V
GE
= ±20V, V
CE
= 0V)
I
CES
I
GES
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d
(on)
t
r
t
d
(off)
t
f
t
d
(on)
t
r
t
d
(off)
t
f
E
on
E
off
E
ts
t
d
(on)
t
r
t
d
(off)
t
f
E
ts
gfe
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
APT60GT60BR
Test Conditions
Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CC
= 0.5V
CES
I
C
= I
C2
Resistive Switching (25°C)
V
GE
= 15V
V
CC
= 0.5V
CES
I
C
= I
C2
R
G
= 10Ω
MIN
TYP
MAX
UNIT
3125
310
180
275
19
120
20
95
315
245
25
3590
450
310
410
30
180
40
190
470
490
50
120
650
130
3.2
4.8
8.0
50
125
590
140
7.0
mJ
S
ns
mJ
ns
ns
nC
pF
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Forward Transconductance
Inductive Switching (150°C)
V
CLAMP
(Peak) = 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10Ω
T
J
= +150°C
59
430
65
1.6
2.4
4.0
Inductive Switching (25°C)
V
CLAMP
(Peak) = 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10Ω
T
J
= +25°C
V
CE
= 20V, I
C
= I
C2
26
63
395
68
3.4
4
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
R
ΘJC
R
ΘJA
W
T
Characteristic
Junction to Case
Junction to Ambient
MIN
TYP
MAX
UNIT
°C/W
0.25
40
0.22
oz
gm
Package Weight
6.1
10
lb•in
N•m
Torque
Mounting Torque (
using a 6-32 or 3mm Binding Head Machine Screw
)
1.1
Rev B 7-2002
1
2
3
4
Repetitive Rating: Pulse width limited by maximum junction temperature.
I
C
= I
C2
, R
GE
= 25
Ω
, L = 36µH, T
j
= 25°C
See MIL-STD-750 Method 3471
The maximum current is limited by lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6223
APT60GT60BR
160
I
C
, COLLECTOR CURRENT (AMPERES)
160
V
GE
=17, 15, 13, 11 & 10V
9V
I
C
, COLLECTOR CURRENT (AMPERES)
V
GE
=17, 15, 13, 11 & 10V
120
9V
120
80
8V
80
8V
7V
40
6V
0
4
8
12
16
20
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 1, Typical Output Characteristics (T
J
= 25°C)
160
0
7V
40
6V
0
5V
0
4
8
12
16
20
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 2, Typical Output Characteristics (T
J
= 150°C)
232
I
C
, COLLECTOR CURRENT (AMPERES)
OPERATION
LIMITED
BY
VCE (SAT)
I
C
, COLLECTOR CURRENT (AMPERES)
250 µsec. Pulse Test
V
GE
= 15V
100
120
T
C
=+25°C
T
C
=+150°C
80
100µs
1ms
10
5
T
C
=+25°C
T
J
=+150°C
SINGLE PULSE
1
1
5 10
50 100
600
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 4, Maximum Forward Safe Operating Area
T
C
=-55°C
40
10ms
0
1
2
3
4
5
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 3, Typical Output Characteristics @ V
GE
= 15V
V
GE
, GATE-TO-EMITTER VOLTAGE (VOLTS)
0
10,000
20
I
C
= I
C2
T
J
= +25°C
V
CE
=120V
C
ies
C, CAPACITANCE (pF)
16
V
CE
=300V
12
V
CE
=480V
8
1,000
f = 1MHz
C
oes
4
C
res
100
0.01
0.1
1.0
10
50
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage
0.5
Z
θ
JC
, THERMAL IMPEDANCE (°C/W)
100
200
300
400
Q
g
, TOTAL GATE CHARGE (nC)
Figure 6, Gate Charges vs Gate-To-Emitter Voltage
0
0
0.1
0.05
D=0.5
0.2
0.1
Note:
0.01
0.005
PDM
0.05
0.02
0.01
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x Z
θJC
+ TC
0.001
10
-5
052-6223
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
-4
10
Rev B 7-2002
APT60GT60BR
4.0
I
C
, COLLECTOR CURRENT (AMPERES)
V
CE
(SAT), COLLECTOR-TO-EMITTER
SATURATION VOLTAGE (VOLTS)
120
3.5
3.0
2.5
2.0
1.5
1.0
I
C1
90
I
C2
60
0.5 I
C2
30
BV
CES
, COLLECTOR-TO-EMITTER BREAKDOWN
VOLTAGE (NORMALIZED)
-25
0
25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Figure 8, Typical V
CE
(SAT) Voltage vs Junction Temperature
1.2
SWITCHING ENERGY LOSSES (mJ)
-50
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
Figure 9, Maximum Collector Current vs Case Temperature
8.0
V
CC
= 0.66 V
CES
V
GE
= +15V
T
J
= +25°C
I
C
= I
C2
0
25
1.1
6.0
E
off
4.0
E
on
2.0
1
0.9
0.8
-25
0
25 50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Figure 10, Breakdown Voltage vs Junction Temperature
20
I
C1
10
V
CC
= 0.66 V
CES
V
GE
= +15V
R
G
= 10
Ω
0.7
-50
20
40
60
80
100
R
G
, GATE RESISTANCE (OHMS)
Figure 11, Typical Switching Energy Losses vs Gate Resistance
2.5
SWITCHING ENERGY LOSSES (mJ)
V
CC
= 0.66 V
CES
V
GE
= +15V
T
J
= +125°C
R
G
= 10
Ω
0
0
TOTAL SWITCHING ENERGY LOSSES (mJ)
2.0
E
off
1.5
I
C2
1.0
E
on
0.5 I
C2
0.5
-25
0
25
50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Figure 12, Typical Switching Energy Losses vs. Junction Temperature
120
I
C
, COLLECTOR CURRENT (AMPERES)
1
-50
10
20
30
40
50
60
I
C
, COLLECTOR CURRENT (AMPERES)
Figure 13, Typical Switching Energy Losses vs Collector Current
For Both:
Duty Cycle = 50%
T
J
= +125°C
T
sink
= +90°C
Gate drive as specified
Power dissapation = 140W
I
LOAD
= I
RMS
of fundamental
0
0
10
Rev B 7-2002
1
0.1
1.0
10
F, FREQUENCY (KHz)
Figure 14,Typical Load Current vs Frequency
100
1000
052-6223
APT60GT60BR
V
CHARGE
*DRIVER SAME TYPE AS D.U.T.
V
CC
= 0.66 V
CES
E
t s
= E
on
+ E
off
90%
B
10%
t
d
(on)
V
C
90%
D.U.T.
V
CE
(SAT)
10%
t
f
E
on
t=2us
E
off
I
C
t
d
(off)
90%
A
DRIVER*
D.U.T.
I
C
100uH
V
CLAMP
R
G
A
V
C
B
A
V
C
I
C
10%
t
r
Figure 15, Switching Loss Test Circuit and Waveforms
2
V
CE
(off)
90%
V
GE
(on)
V
CC
R
L
=
2
.5 V
CES
I
C2
D.U.T.
10%
1
V
GE
(off)
t
d
(on)
t
r
t
d
(off)
t
f
From
Gate Drive
Circuitry
R
G
V
CE
(on)
1
Figure 16, Resistive Switching Time Test Circuit and Waveforms
T0-247 Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
6.15 (.242) BSC
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
Collector
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Gate
Collector
Rev B 7-2002
052-6223
Emitter
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents:
4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
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