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1N5819

Description
1 A, 45 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size59KB,2 Pages
ManufacturerETC2
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1N5819 Overview

1 A, 45 V, SILICON, SIGNAL DIODE

1N5819 Parametric

Parameter NameAttribute value
Number of terminals1
Number of components1
Processing package descriptionDIE-2
stateDISCONTINUED
packaging shapeSQUARE
Package SizeUNCASED chip
surface mountYes
Terminal formNO
terminal coatingtin lead
Terminal locationUPPER
Packaging MaterialsUNSPECIFIED
CraftsmanshipSCHOTTKY
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typeSignal diode
Maximum repetitive peak reverse voltage45 V
Maximum average forward current1 A
1N5817
THRU
1N5819
1.0 AMP SCHOTTKY BARRIER RECTIFIERS
VOLTAGE RANGE
20 to 40 Volts
CURRENT
FEATURES
* Low forward voltage drop
* High current capability
* High reliability
* High surge current capability
* Epitaxial construction
1.0 Ampere
DO-41
.107(2.7)
.080(2.0)
DIA.
1.0(25.4)
MIN.
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Lead: Axial leads, solderable per MIL-STD-202,
method 208 guranteed
* Polarity: Color band denotes cathode end
* Mounting position: Any
.034(.9)
.028(.7)
DIA.
.205(5.2)
.166(4.2)
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Length at Ta=90 C
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage at 1.0A
Maximum DC Reverse Current
Ta=25 C
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note1)
Typical Thermal Resistance R JA (Note 2)
Operating Temperature Range T
J
Storage Temperature Range T
STG
NOTES:
1N5817
20
14
20
1N5818
30
21
30
1.0
25
1N5819
40
28
40
UNITS
V
V
V
A
A
V
mA
mA
pF
C/W
C
C
0.45
0.55
1.0
10
110
80
-65 +125
-65 +150
0.60
Ta=100 C
1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2. Thermal Resistance Junction to Ambient Vertical PC Board Mounting 0.5"(12.7mm) Lead Length.
12

1N5819 Related Products

1N5819 1N5817
Description 1 A, 45 V, SILICON, SIGNAL DIODE RECTIFIER DIODE,SCHOTTKY,20V V(RRM),DO-41
state DISCONTINUED CONSULT MFR
Diode type Signal diode rectifier diode

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