5HN01M datasheet, PDF - EEWORLD Datasheet

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5HN01M: DescriptionTRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,100MA I(D),SOT-323; CategoryDiscrete semiconductor The transistor; File Size31KB，4 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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5HN01M Overview

TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,100MA I(D),SOT-323

5HN01M Parametric

Parameter Name	Attribute value
Maker	ON Semiconductor
package instruction	,
Reach Compliance Code	compliant
Configuration	Single
Maximum drain current (Abs) (ID)	0.1 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.15 W
surface mount	YES

5HN01M Preview

Ordering number : EN6136A

5HN01M

Features

•

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

Low ON-resistance.

Ultrahigh-speed switching.

4V drive.

Specifications

Absolute Maximum Ratings

at Ta=25°C

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Symbol

VDSS

VGSS

IDP

Tch

Tstg

PW≤10µs, duty cycle≤1%

Conditions

Ratings

±20

0.1

0.4

0.15

150

--55 to +150

Unit

°C

Electrical Characteristics

at Ta=25°C

Parameter

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Symbol

V(BR)DSS

IDSS

IGSS

VGS(off)



yfs



RDS(on)1

RDS(on)2

Ciss

Coss

Crss

Conditions

ID=1mA, VGS=0V

VDS=50V, VGS=0V

VGS=±16V, VDS=0V

VDS=10V, ID=100µA

VDS=10V, ID=50mA

ID=50mA, VGS=10V

ID=30mA, VGS=4V

VDS=10V, f=1MHz

Ratings

min

±10

120

5.8

7.5

6.2

4.4

1.5

7.5

10.5

2.4

typ

max

Unit

µA

Ω

Marking : YC

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

31506PE MS IM TB-00002110 / 90100 TS IM TA-2044 No.6136-1/4

5HN01M

Continued from preceding page.

Parameter

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain “Miller” Charge

Diode Forward Voltage

Symbol

td(on)

td(off)

Qgs

Qgd

VSD

Conditions

See specified Test Circuit.

VDS=10V, VGS=10V, ID=100mA

IS=100mA, VGS=0V

Ratings

min

typ

105

1.40

0.21

0.34

0.85

1.2

max

Unit

Package Dimensions

unit : mm

7023-010

0.425

Switching Time Test Circuit

VDD=25V

VIN

ID=50mA

RL=500Ω

10V

0.2

VIN

0.3

0.15

PW=10µs

D.C.≤1%

VOUT

1.25

2.1

0 to 0.1

5HN01M

0.425

0.65 0.65

2.0

P.G

0.3

0.9

0.6

50Ω

1 : Gate

2 : Source

3 : Drain

SANYO : MCP

0.10

ID -- VDS

8.0

0.20

0.18

ID -- VGS

VDS=10V

Ta=

0.08

.0V

3.0

Drain Current, ID -- A

0.16

0.14

0.12

0.10

0.08

0.06

0.04

Drain Current, ID -- A

0.06

0.04

2.5V

0.02

VGS=2.0V

0.2

0.4

0.6

0.8

1.0

IT00042

0.02

IT00043

Drain-to-Source Voltage, VDS -- V

RDS(on) -- VGS

Gate-to-Source Voltage, VGS -- V

100

RDS(on) -- ID

VGS=10V

Ta=25°C

Static Drain-to-Source

On-State Resistance, RDS(on) --

Ω

Static Drain-to-Source

On-State Resistance, RDS(on) --

Ω

50mA

ID=30mA

Ta=75°C

25°C

--25°C

1.0

0.01

0.1

IT00045

Gate-to-Source Voltage, VGS -- V

IT00044

Drain Current, ID -- A

No.6136-2/4

5HN01M

100

RDS(on) -- ID

VGS=4V

RDS(on) -- Ta

Static Drain-to-Source

On-State Resistance, RDS(on) --

Ω

Static Drain-to-Source

On-State Resistance, RDS(on) --

Ω

Ta=75°C

25°C

--25°C

10V

I D=

--60

1.0

0.01

0.1

--40

--20

100

120

140

160

Drain Current, ID -- A

1.0

IT00046



-- ID

Ambient Temperature, Ta --

°C

IT00047

IS -- VSD

VGS=0V

Forward Transfer Admittance,

yfs

-- S

VDS=10V

Source Current, IS -- A

0.1

-25

Ta= -

0.1

25°C

0.5

0.6

0.01

0.1

0.01

0.4

Ta= 7

0.7

--25

0.8

0.9

1.0

1.1

1.2

Drain Current, ID -- A

1000

IT00048

100

SW Time -- ID

Diode Forward Voltage, VSD -- V

IT00049

Ciss, Coss, Crss -- VDS

f=1MHz

VDD=25V

VGS=10V

td(off)

td(on)

Switching Time, SW Time -- ns

100

1.0

0.01

Ciss, Coss, Crss -- pF

Ciss

Coss

Crss

1.0

0.1

Drain Current, ID -- A

0.1

IT00050

0.20

VGS -- Qg

Drain-to-Source Voltage, VDS -- V

IT00051

PD -- Ta

0.3

0.6

0.9

1.2

1.5

IT00052

Allowable Power Dissipation, PD -- W

Gate-to-Source Voltage, VGS -- V

VDS=10V

ID=0.1A

0.15

0.10

0.05

100

120

140

160

Total Gate Charge, Qg -- nC

Ambient Temperature, Ta --

°C

IT02381

No.6136-3/4

5HN01M

Note on usage : Since the 5HN01M is a MOSFET product, please avoid using this device in the vicinity

of highly charged objects.

Specifications of any and all SANYO products described or contained herein stipulate the performance,

characteristics, and functions of the described products in the independent state, and are not guarantees

of the performance, characteristics, and functions of the described products as mounted in the customer’s

products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,

the customer should always evaluate and test devices mounted in the customer’s products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,

or that could cause damage to other property. When designing equipment, adopt safety measures so

that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or

contained herein are controlled under any of applicable local export control laws and regulations,

such products must not be exported without obtaining the export license from the authorities

concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Electric Co., Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not

guaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rights

or other rights of third parties.

This catalog provides information as of March, 2006. Specifications and information herein are subject

to change without notice.

PS No.6136-4/4

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