5SMX12K1274 datasheet, PDF - EEWORLD Datasheet

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5SMX12K1274: DescriptionInsulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, 11 X 11 MM, DIE-2; CategoryDiscrete semiconductor The transistor; File Size65KB，5 Pages; ManufacturerABB; Websitehttp://www.abb.com/

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5SMX12K1274 Overview

Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, 11 X 11 MM, DIE-2

5SMX12K1274 Parametric

Parameter Name	Attribute value
Maker	ABB
Parts packaging code	DIE
package instruction	UNCASED CHIP, S-XUUC-N2
Contacts	2
Reach Compliance Code	compliant
Maximum collector current (IC)	75 A
Collector-emitter maximum voltage	1200 V
Configuration	SINGLE
JESD-30 code	S-XUUC-N2
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Package body material	UNSPECIFIED
Package shape	SQUARE
Package form	UNCASED CHIP
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
Transistor component materials	SILICON
Nominal off time (toff)	540 ns
Nominal on time (ton)	260 ns

5SMX12K1274 Preview

1200 V

75 A

IGBT-Die

5SMX 12K1274

Die size: 11.0 x 11.0 mm

Doc. No. 5SYA 1303-00 Dec 07

•

Low loss, rugged SPT technology

Smooth switching for good EMC

Minimized gate charge, short delay times

Optimized for paralleling

Large bondable emitter area

Maximum rated values

Parameter

Collector-emitter voltage

DC collector current

Peak collector current

Gate-emitter voltage

IGBT short circuit SOA

Junction temperature

Symbol Conditions

CES

GES

psc

= 900 V, V

CEM

≤

1200 V

≤

15 V, T

≤

125 °C

Limited by T

vjmax

= 0 V, T

≥

25 °C

min

max

1200

150

Unit

µs

°C

-20

-40

150

Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

5SMX 12K1274

IGBT characteristic values

Parameter

Collector (-emitter)

breakdown voltage

Collector-emitter

saturation voltage

Collector cut-off current

Gate leakage current

Gate-emitter threshold voltage

Gate charge

Input capacitance

Output capacitance

Reverse transfer capacitance

Internal gate resistance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Symbol Conditions

(BR)CES

CE sat

CES

GES

GE(TO)

ies

oes

res

Gint

d(on)

d(off)

= 600 V, I

= 75 A,

= 10

Ω,

±15

= 60 nH,

inductive load

= 600 V, I

= 75 A,

= 15

Ω,

±15

= 60 nH,

inductive load

= 600 V, I

= 75 A,

= ±15 V, R

= 10

Ω,

= 60 nH,

inductive load,

FWD: 5SLX12F1200

= 600 V, I

= 75 A,

= ±15 V, R

= 15

Ω,

= 60 nH,

inductive load

= 25 °C

= 125 °C

= 25 °C

= 125 °C

= 25 °C

= 125 °C

= 25 °C

= 125 °C

= 25 °C

= 125 °C

= 25 °C

= 125 °C

= 0 V, I

= 1 mA, T

= 25 °C

= 75 A, V

= 15 V

= 1200 V, V

= 0 V

= 25 °C

= 125 °C

= 25 °C

= 125 °C

min

1200

1.7

typ

max

Unit

1.9

2.1

2.3

100

µA

Ω

225

-200

4.5

710

6.92

0.46

0.29

170

195

415

470

6.3

200

6.5

= 0 V, V

±20

V, T

= 125 °C

= 3 mA, V

= V

, T

= 25 °C

= 75 A, V

= 600 V, V

= -15 ..15 V

= 25 V, V

= 0 V, f = 1 MHz,

= 25 °C

Turn-on switching energy

9.2

4.9

7.8

420

Turn-off switching energy

off

Short circuit current

psc

≤

μs,

= 15 V, T

= 125 °C,

= 900 V, V

CEM

≤

1200 V

Characteristic values according to IEC 60747 - 9

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA 1303-00 Dec 07

page 2 of 5

5SMX 12K1274

Mechanical properties

Parameter

Overall die L

Dimensions

exposed

W (except gate pad)

front metal

gate pad

thickness

Metallization

Unit

11.0

9.5

1.2

130 ± 20

AlSi1

Al / Ti / Ni / Ag

1.8

µm

front (E)

back (C)

For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033.

Outline drawing

Emitter

Note: all dimensions are shown in mm

This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, Chap. IX.

This product has been designed and qualified for Industrial Level.

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA 1303-00 Dec 07

page 3 of 5

5SMX 12K1274

150

= 20 V

125

25 °C

100

125 °C

125

100

[A]

125 °C

25 °C

= 15 V

[V]

10 11 12

[V]

Fig. 1

Typical on-state characteristics

Fig. 2

Typical transfer characteristics

0.06

= 600 V

Gon

= 10 ohm

Goff

= 15 ohm

= ±15 V

= 125 °C

= 60 nH

, E

off

[J]

0.040

0.035

0.030

0.025

= 600 V

= 75 A

= ±15 V

= 125 °C

= 60 nH

0.05

0.04

, E

off

[J]

0.03

0.020

0.015

0.02

off

0.01

0.005

100

[A]

150

200

250

0.000

100

[ohm]

0.010

off

Fig. 3

Typical switching characteristics vs

collector current

Fig. 4

Typical switching characteristics vs

gate resistor

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA 1303-00 Dec 07

page 4 of 5

5SMX 12K1274

ies

= 600 V

= 800 V

[V]

= 0 V

OSC

= 1 MHz

OSC

= 50 mV

C [nF]

oes

res

= 75 A

= 25 °C

0.0

0.1

0.2

0.3

0.4

[µC]

0.5

0.6

0.7

0.1

[V]

Fig. 5

Typical gate charge characteristics

Fig. 6

Typical capacitances vs

collector-emitter voltage

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

ABB Switzerland Ltd

Semiconductors

Fabrikstrasse 3

CH-5600 Lenzburg, Switzerland

Telephone

Fax

Internet

+41 (0)58 586 1419

+41 (0)58 586 1306

abbsem@ch.abb.com

www.abb.com/semiconductors

Doc. No. 5SYA 1303-00 Dec 07

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