Power Bipolar Transistor, 0.2A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
| Parameter Name | Attribute value |
| Maker | SAMSUNG |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Shell connection | ISOLATED |
| Maximum collector current (IC) | 0.2 A |
| Collector-emitter maximum voltage | 120 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 20 |
| JEDEC-95 code | TO-126 |
| JESD-30 code | R-PSFM-T3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 8 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 400 MHz |
| KSC3953 | KSC3953-C | KSC3953-D | |
|---|---|---|---|
| Description | Power Bipolar Transistor, 0.2A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin | Power Bipolar Transistor, 0.2A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin | Power Bipolar Transistor, 0.2A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin |
| package instruction | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 |
| Shell connection | ISOLATED | ISOLATED | ISOLATED |
| Maximum collector current (IC) | 0.2 A | 0.2 A | 0.2 A |
| Collector-emitter maximum voltage | 120 V | 120 V | 120 V |
| Configuration | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 20 | 40 | 60 |
| JEDEC-95 code | TO-126 | TO-126 | TO-126 |
| JESD-30 code | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
| Number of components | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Polarity/channel type | NPN | NPN | NPN |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | SINGLE | SINGLE | SINGLE |
| transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| Transistor component materials | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 400 MHz | 400 MHz | 400 MHz |
| Maker | SAMSUNG | SAMSUNG | - |
| Is Samacsys | - | N | N |
| Maximum power consumption environment | - | 8 W | 8 W |
| VCEsat-Max | - | 1 V | 1 V |
| Base Number Matches | - | 1 | 1 |
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