SSF1030B
Feathers:
Advanced trench process technology
Ultra low Rdson, typical 25mohm
High avalanche energy, 100% test
Fully characterized avalanche voltage and current
ID =7A
BV=100V
Rdson=25mΩ（typ.）
Description:
The SSF1030B is a new generation of middle voltage and
high current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF1030B is
assembled in high reliability and qualified assembly house.
Application:
Power switching application
SOP-8 TOP View
Marking and pin Assignment
Absolute Maximum Ratings
Parameter
I
D
@T
c
=25 ْC
I
D
@T
c
=100ْC
I
DM
P
D
@T
C
=25ْC
V
GS
E
AS
E
AR
T
J
T
STG
Continuous drain current,VGS@10V
Continuous drain current,VGS@10V
Pulsed drain current
Power dissipation
Gate-to-Source voltage
Single pulse avalanche energy
②
Repetitive avalanche energy
Operating Junction and
Storage Temperature Range
①
Max.
7
5.0
30
8.8
±20
33
TBD
–55 to +175
ْC
W
V
mJ
A
Units
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-case
Junction-to-ambient
Min.
—
—
Typ.
17
—
Max.
—
85
Units
ْC/W
Electrical Characteristics @TJ=25 ْC(unless otherwise specified)
Parameter
BV
DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Forward transconductance
Drain-to-Source leakage current
Min.
100
—
2.0
—
—
—
Typ.
—
25
3.1
25
—
—
Max. Units
—
30
4.0
—
1
10
μA
V
mΩ
V
S
Test Conditions
V
GS
=0V,I
D
=250μA
V
GS
=10V,I
D
=10A
V
DS
=V
GS
,I
D
=250μA
V
DS
=15V,I
D
=6.9A
V
DS
=100V,V
GS
=0V
V
DS
=100V,
V
GS
=0V,T
J
=150ْC
Version: 1.1
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©
Silikron Semiconductor Corporation
2011.2.23
SSF1030B
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate-to-Source forward leakage
Gate-to-Source reverse leakage
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
Turn-Off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
42
15
14.6
14.2
40
7.3
14.8
190
135
4.2
100
-100
—
—
—
—
—
—
—
—
—
—
pF
nS
nC
nA
V
GS
=20V
V
GS
=-20V
I
D
=6.9A
V
DD
=30V
V
GS
=10V
V
DD
=30V
I
D
=2A ,R
L
=15Ω
R
G
=2.5Ω
V
GS
=10V
V
GS
=0V
V
DS
=25V
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
①
.
.
Min.
—
—
—
－
－
Typ.
—
—
—
57
107
Max.
7
A
30
1.3
—
—
V
nS
nC
Units
Test Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
=25ْC,I
S
=30A,V
GS
=0V
③
T
J
=25ْC,I
F
=3.1A
di/dt=100A/μs
③
V
SD
Diode Forward Voltage
t
rr
t
on
Notes:
Reverse Recovery Time
Forward Turn-on Time
Q
rr
Reverse Recovery Charge
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
①
Repetitive rating; pulse width limited by max junction temperature.
②
Test condition: L =0.3mH, ID = 15A, VDD = 50V
③
Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°
C
©
Silikron Semiconductor Corporation
2011.2.23
Version: 1.1
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SSF1030B
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