SSF1502D
Main Product Characteristics:
V
DSS
R
DS
(on)
I
D
170V(typ)
0.15Ω(typ)
8A
DPAK
Marking and pin
Assignment
Schematic diagram
Features and Benefits:
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications
Absolute max Rating:
Symbol
I
D
@ TC = 25°C
I
D
@ TC = 100°C
I
DM
P
D
@TC = 25°C
V
DS
V
GS
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V①
Continuous Drain Current, V
GS
@ 10V①
Pulsed Drain Current②
Power Dissipation③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature Range
Max.
8
5
32
33
0.18
150
± 20
-55 to + 175
W
W/°C
V
V
°C
A
Units
©
Silikron Semiconductor CO.,LTD.
2011.05.25
www.silikron.com
Version : 1.0
page 1 of 8
SSF1502D
Typ.
—
—
—
Max.
4.5
70
53
Units
℃/W
℃/W
℃/W
Thermal Resistance
Symbol
R
θJC
R
θJA
Characterizes
Junction-to-case③
Junction-to-Ambient (t
≤ 10s)
④
Junction-to-Ambient (PCB mounted, steady-state)
④
Electrical Characterizes
@T
A
=25℃
unless otherwise specified
Symbol
V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage
Gate-to-Source reverse leakage
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
Turn-Off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
Min.
150
—
—
2
—
—
—
Typ.
170
0.15
0.32
—
2.7
—
—
0.2
—
4
—
1
50
100
Max.
Units
V
Ω
V
μA
A
Conditions
V
GS
= 0V, ID = 250μA
V
GS
=10V,I
D
= 3A
T
J
= 125℃
V
DS
= V
GS
, I
D
= 250μA
T
J
= 125℃
V
DS
= 150,Vgs=10V
T
J
= 125°C
V
GS
=20V
V
GS
= -20V
I
D
= 6A
nC
V
DD
=120V
V
GS
= 10V
V
GS
=10V, VDD=24.6V,
ns
R
L
=8.2Ω,
R
GEN
=2.55Ω
ID=3.00A
V
GS
= 0V
pF
V
DS
= 25V
ƒ = 800KHz
‐100
-
37
7.5
13.
32
51.5
157
67
1524
171
77
Source-Drain Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
—
—
Typ.
—
—
0.82
90
105
Max.
8
32
1.5
Units
A
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
I
S
=6.00A, V
GS
=0V,T
J
= 25°C
T
J
= 25°C, I
F
=6.00A, di/dt =
25.0A/μs
©
Silikron Semiconductor CO.,LTD.
2011.05.25
www.silikron.com
Version : 1.0
page 2 of 8
SSF1502D
Test circuits and Waveforms
Switch Waveforms:
Notes:
①The
maximum current rating is limited by bond-wires.
②
Repetitive rating; pulse width limited by max. junction temperature.
③The
power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The
value of
R
θJA
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These
curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of T
J(MAX)
=175°C.
⑥
The maximum current rating is limited by bond-wires.
©
Silikron Semiconductor CO.,LTD.
2011.05.25
www.silikron.com
Version : 1.0
page 3 of 8
SSF1502D
Typical electrical and thermal characteristics
Figure 1: Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage vs.
Temperature
Figure 2.
Gate to source cut‐off voltage
Figure 4: Normalized On-Resistance Vs. Case
Temperature
©
Silikron Semiconductor CO.,LTD.
2011.05.25
www.silikron.com
Version : 1.0
page 4 of 8
SSF1502D
Typical electrical and thermal characteristics
Figure 5. Maximum Drain Current Vs. Case
Temperature
Figure 6.Typical Capacitance Vs. Drain-to-Source
Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
©
Silikron Semiconductor CO.,LTD.
2011.05.25
www.silikron.com
Version : 1.0
page 5 of 8
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