Bulletin I2401 rev. A 07/00
50RIA SERIES
MEDIUM POWER THYRISTORS
Features
High current rating
Excellent dynamic characteristics
dv/dt = 1000V/µs option
Superior surge capabilities
Standard package
Metric threads version available
Types up to 1600V V
DRM
/ V
RRM
Stud Version
50 A
Typical Applications
Phase control applications in converters
Lighting circuits
Battery charges
Regulated power supplies and temperature and
speed control circuit
Can be supplied to meet stringent military,
aerospace and other high-reliability requirements
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
C
I
T(RMS)
I
TSM
I
2
t
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
V
DRM
/V
RRM
t
q
T
J
typical
50RIA
10 to 120
140 to 160
50
94
80
1430
1490
10.18
9.30
100 to 1200
110
- 40 to 125
50
90
80
1200
1257
7.21
6.58
1400 to 1600
Units
A
°C
A
A
A
KA
2
s
KA
2
s
V
µs
°C
Case Style
TO-208AC (TO-65)
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1
50RIA Series
Bulletin I2401 rev. A 07/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
10
20
40
60
50RIA
80
100
120
140
160
V
DRM
/V
RRM
, max. repetitive
peak and off-state voltage (1)
V
100
200
400
600
800
1000
1200
1400
1600
V
RSM
, maximum non-
repetitive peak voltage (2)
V
150
300
500
700
900
1100
1300
1500
1700
I
DRM
/I
RRM
max.
@ T
J
= T
J
max.
mA
15
(1)
Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/µs
(2)
For voltage pulses with t
p
≤
5ms
On-state Conduction
Parameter
I
T(AV)
I
T(RMS)
I
TSM
Max. average on-state current
@ Case temperature
Max. RMS on-state current
Max. peak, one-cycle
non-repetitive surge current
50RIA
10 to 120
50
94
80
1430
1490
1200
1255
140 to 160
50
90
80
1200
1257
1010
1057
7.21
6.58
5.10
4.65
72.1
1.02
1.17
4.78
3.97
1.78
Units
A
°C
A
A
Conditions
180° sinusoidal conduction
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= T
J
max.
I
2
t
Maximum I
2
t for fusing
10.18
9.30
7.20
6.56
KA
2
s
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
I
2
√t
V
T(TO)1
Maximum I
2
√t
for fusing
Low level value of threshold
voltage
101.8
0.94
1.08
4.08
3.34
1.60
200
400
KA
2
√s
V
t = 0.1 to 10ms, no voltage reapplied, T
J
= T
J
max.
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(π x I
T(AV)
< I < 20 x
π
x I
T(AV)
), T
J
= T
J
max.
V
T(TO)
2
High level value of threshold
voltage
r
t1
r
t2
V
TM
I
H
I
L
Low level value of on-state
slope resistance
High level value of on-state
slope resistance
Max. on-state voltage
Maximum holding current
Latching current
mΩ
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(π x I
T(AV)
< I < 20 x
π
x I
T(AV)
), T
J
= T
J
max.
V
mA
I
pk
= 157 A, T
J
= 25°C
T
J
= 25°C. Anode supply 22V, resistive load,
Initial I
T
= 2A
Anode supply 6V, resistive load
2
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50RIA Series
Bulletin I2401 rev. A 07/00
Switching
Parameter
di/dt
Max. rate of rise of turned-on
current
V
DRM
≤
600V
V
DRM
≤
1600V
t
d
t
q
Typical delay time
200
100
0.9
µs
Typical turn-off time
110
A/µs
50RIA
Units
Conditions
T
C
= 125°C, V
DM
= rated V
DRM
Gate pulse = 20V, 15Ω, t
p
= 6µs, t
r
= 0.1µs max.
I
TM
= (2x rated di/dt) A
T
C
= 25°C V
DM
= rated V
DRM
I
TM
= 10A dc resistive circuit
Gate pulse = 10V, 15Ω source, t
p
= 20µs
T
C
= 125°C, I
TM
= 50A, reapplied dv/dt = 20V/µs
dir/dt = -10A/µs, V
R
=50V
Blocking
Parameter
dv/dt
Max. critical rate of rise of
off-state voltage
50RIA
200
500 (*)
Units Conditions
V/µs
T
J
= T
J
max. linear to 100% rated V
DRM
T
J
= T
J
max. linear to 67% rated V
DRM
(*) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. 50RIA160S90.
Triggering
Parameter
P
GM
I
GM
+V
GM
-V
GM
I
GT
Maximum peak gate power
P
G(AV)
Maximum average gate power
Max. peak positive gate current
Maximum peak positive
gate voltage
Maximum peak negative
gate voltage
DC gate current required
to trigger
10
250
100
50
V
GT
DC gate voltage required
to trigger
I
GD
V
GD
DC gate current not to trigger
DC gate voltage not to trigger
3.5
2.5
5.0
0.2
V
mA
V
mA
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
T
J
= - 40°C
T
J
= 25°C
Max. gate current/ voltage not to
T
J
= T
J
max
V
DRM
= rated voltage trigger is the max. value which
will not trigger any unit with rated
T
J
= T
J
max
V
DRM
anode-to-cathode applied
20
V
50RIA
10
2.5
2.5
Units Conditions
W
A
T
J
= T
J
max, t
p
≤
5ms
Max. required gate trigger
current/voltage are the
lowest value which will trigger
all units 6V anode-to-cathode
applied
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50RIA Series
Bulletin I2401 rev. A 07/00
Thermal and Mechanical Specification
Parameter
T
J
T
stg
Max. operating temperature range
Max. storage temperature range
50RIA
- 40 to 125
- 40 to 125
0.35
Units Conditions
°C
°C
K/W
DC operation
R
thJC
Max. thermal resistance,
junction to case
R
thCS
Max. thermal resistance,
case to heatsink
T
Mounting torque
Min.
Max.
wt
Approximate weight
Case style
0.25
K/W
Mounting surface, smooth, flat and greased
2.8 (25)
3.4 (30)
28 (1.0)
Nm
(lbf-in)
g (oz)
Non-lubricated threads
TO-208AC (TO-65)
See Outline Table
∆R
thJC
Conduction
(The following table shows the increment of thermal resistence R
thJC
when devices operate at different conduction angles than DC)
Conduction angle
180°
120°
90°
60°
30°
Sinusoidal conduction Rectangular conduction Units
0.078
0.094
0.120
0.176
0.294
0.057
0.098
0.130
0.183
0.296
K/W
Conditions
T
J
= T
J
max.
Ordering Information Table
Device Code
50
1
RIA 160 S90
2
3
4
M
5
1
2
3
4
-
-
-
-
Current code
Essential part number
Voltage code: Code x 10 = V
RRM
(See Voltage Rating Table)
Critical dv/dt: None = 500V/µs (Standard value)
S90
= 1000V/µs (Special selection)
5
-
None = Stud base TO-208AC (TO-65) 1/4" 28UNF-2A
M
= Stud base TO-208AC (TO-65) M6 X 1
4
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50RIA Series
Bulletin I2401 rev. A 07/00
Outline Table
Case Style TO-208AC (TO-65)
All dimensions in millimeters (inches)
Maximum Allowable Case Temperature (°C)
50RIA Series (100V to 1200V)
R
thJC
(DC) = 0.35 K/W
Maximum Allowable Case Temperature (°C)
130
130
50RIA Series (100V to 1200V)
R
thJC
(DC) = 0.35 K/W
120
Conduction Angle
120
110
Conduction Period
110
30°
100
60°
100
90°
120°
180°
90
30°
80
0
10
20
60°
90°
120°
40
180°
60
DC
70
80
90
0
10
20
30
40
50
60
30
50
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristic
Fig. 2 - Current Ratings Characteristic
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Embedded System
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