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MA27P070G

Description
Pin Diode, Silicon, ROHS COMPLIANT, SSSMINI2-F3, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size223KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance  
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MA27P070G Overview

Pin Diode, Silicon, ROHS COMPLIANT, SSSMINI2-F3, 2 PIN

MA27P070G Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerPanasonic
Parts packaging codeDFP
package instructionR-PDSO-F2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
applicationSWITCHING
ConfigurationSINGLE
Maximum diode capacitance0.35 pF
Diode component materialsSILICON
Maximum diode forward resistance1.5 Ω
Diode typePIN DIODE
JESD-30 codeR-PDSO-F2
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.15 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
This product complies with the RoHS Directive (EU 2002/95/EC).
PIN Diodes
MA27P07
Silicon planar type
For high frequency switch
Features
0.27
+0.05
–0.02
1
1.00
±0.05
1.40
±0.05
Unit: mm
0.12
+0.05
–0.02
M
ain
Di
sc te
on na
tin nc
ue e/
d
Low terminal capacitance: C
t
0.35 pF
Low forward dynamic resistance: r
f
1.5
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
R
I
F
P
D
T
j
Reverse voltage
2
Power dissipation
150
150
mW
°C
°C
Storage temperature
T
stg
−55
to
+150
0 to 0.01
Junction temperature
1: Anode
2: Cathode
SSSMini2-F2 Package
Marking Symbol: K
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Symbol
V
F
I
R
r
f
C
t
Forward voltage
Reverse current
Conditions
Min
Typ
Max
1.0
Unit
V
I
F
=
10 mA
V
R
=
60 V
ue
100
nA
pF
Forward dynamic resistance
on
tin
Terminal capacitance
V
R
=
1 V, f
=
1 MHz
0.35
1.5
I
F
= 10 mA, f = 100 MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
Ma
int
en
an
ce
/D
isc
0.15 max.
0.52
±0.03
Forward current
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ct
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life
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d
as lat
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on es
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Rating
60
Unit
V
0.60
±0.05
100
mA
0.15 min.
0.15 min.
Publication date: September 2003
SKL00016AED
1

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