MBM29F200TC-90PFTR datasheet, PDF

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MBM29F200TC-90PFTR: DescriptionIC,EEPROM,NOR FLASH,128KX16/256KX8,CMOS,TSSOP,48PIN,PLASTIC; Categorystorage storage; File Size544KB，46 Pages; ManufacturerCypress Semiconductor

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MBM29F200TC-90PFTR Overview

IC,EEPROM,NOR FLASH,128KX16/256KX8,CMOS,TSSOP,48PIN,PLASTIC

MBM29F200TC-90PFTR Parametric

Parameter Name	Attribute value
Maker	Cypress Semiconductor
Reach Compliance Code	compliant
Maximum access time	90 ns
Spare memory width	8
startup block	TOP
command user interface	YES
Data polling	YES
Durability	100000 Write/Erase Cycles
JESD-30 code	R-PDSO-G48
memory density	2097152 bit
Memory IC Type	FLASH
Number of departments/size	1,2,1,3
Number of terminals	48
word count	131072 words
character code	128000
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	128KX16
Package body material	PLASTIC/EPOXY
encapsulated code	TSSOP
Encapsulate equivalent code	TSSOP48,.8,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
ready/busy	YES
reverse pinout	YES
Department size	16K,8K,32K,64K
Maximum standby current	0.000005 A
Maximum slew rate	0.05 mA
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
switch bit	YES
type	NOR TYPE

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SPANSION Flash Memory

Data Sheet

September 2003

This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and

Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

these products will be offered to customers of both AMD and Fujitsu.

Continuity of Specifications

There is no change to this datasheet as a result of offering the device as a SPANSION

revisions will occur when appropriate, and changes will be noted in a revision summary.

product. Future routine

Continuity of Ordering Part Numbers

AMD and Fujitsu continue to support existing part numbers beginning with "Am" and "MBM". To order these

products, please use only the Ordering Part Numbers listed in this document.

For More Information

Please contact your local AMD or Fujitsu sales office for additional information about SPANSION

solutions.

memory

MBM29F200TC

-55/70/90

/MBM29F200BC

-55/70/90

(Continued)

The MBM29F200TC/BC is pin and command set compatible with JEDEC standard. Commands are written to

the command register using standard microprocessor write timings. Register contents serve as input to an

internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch

addresses and data needed for the programming and erase operations. Reading data out of the devices is similar

to reading from12.0 V Flash or EPROM devices.

The MBM29F200TC/BC is programmed by executing the program command sequence. This will invoke the

Embedded Program Algorithm which is an internal algorithm that automatically times the program pulse widths

and verifies proper cell margin. Typically, each sector can be programmed and verified in less than 0.5 seconds.

Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase

Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed

before executing the erase operation. During erase, the device automatically times the erase pulse widths and

verifies proper cell margin.

A sector is typically erased and verified in 1.0 second (if already completely preprogrammed.).

The devices also features a sector erase architecture. The sector mode allows each sector to be erased and

reprogrammed without affecting other sectors. The MBM29F200TC/BC is erased when shipped from the factory.

The devices features single 5.0 V power supply operation for both read and write functions. Internally generated

and regulated voltages are provided for the program and erase operations. A low V

detector automatically

inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ

by the Toggle Bit feature on DQ

, or the RY/BY output pin. Once the end of a program or erase cycle has been

completed, the device internally resets to the read mode.

Fujitsu’s Flash technology combines years of EPROM and E

PROM experience to produce the highest levels

of quality, reliability, and cost effectiveness. The MBM29F200TC/BC memory electrically erase the entire chip

or all bits within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one

byte/word at a time using the EPROM programming mechanism of hot electron injection.

MBM29F200TC-90PFTR Related Products

	MBM29F200TC-90PFTR	MBM29F200BC-55PFTR	MBM29F200TC-55PF	MBM29F200TC-55PFTR	MBM29F200BC-70PFTN	MBM29F200TC-90PFTN	MBM29F200TC-70PFTN	MBM29F200TC-90PF	MBM29F200BC-70PF	MBM29F200BC-90PFTN
Description	IC,EEPROM,NOR FLASH,128KX16/256KX8,CMOS,TSSOP,48PIN,PLASTIC	IC,EEPROM,NOR FLASH,128KX16/256KX8,CMOS,TSSOP,48PIN,PLASTIC	IC,EEPROM,NOR FLASH,128KX16/256KX8,CMOS,SOP,44PIN,PLASTIC	IC,EEPROM,NOR FLASH,128KX16/256KX8,CMOS,TSSOP,48PIN,PLASTIC	IC,EEPROM,NOR FLASH,128KX16/256KX8,CMOS,TSSOP,48PIN,PLASTIC	IC,EEPROM,NOR FLASH,128KX16/256KX8,CMOS,TSSOP,48PIN,PLASTIC	IC,EEPROM,NOR FLASH,128KX16/256KX8,CMOS,TSSOP,48PIN,PLASTIC	IC,EEPROM,NOR FLASH,128KX16/256KX8,CMOS,SOP,44PIN,PLASTIC	IC,EEPROM,NOR FLASH,128KX16/256KX8,CMOS,SOP,44PIN,PLASTIC	IC,EEPROM,NOR FLASH,128KX16/256KX8,CMOS,TSSOP,48PIN,PLASTIC
Maker	Cypress Semiconductor	Cypress Semiconductor	Cypress Semiconductor	Cypress Semiconductor	Cypress Semiconductor	Cypress Semiconductor	Cypress Semiconductor	Cypress Semiconductor	Cypress Semiconductor	Cypress Semiconductor
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
Maximum access time	90 ns	55 ns	55 ns	55 ns	70 ns	90 ns	70 ns	90 ns	70 ns	90 ns
Spare memory width	8	8	8	8	8	8	8	8	8	8
startup block	TOP	BOTTOM	TOP	TOP	BOTTOM	TOP	TOP	TOP	BOTTOM	BOTTOM
command user interface	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
Data polling	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
Durability	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles
JESD-30 code	R-PDSO-G48	R-PDSO-G48	R-PDSO-G44	R-PDSO-G48	R-PDSO-G48	R-PDSO-G48	R-PDSO-G48	R-PDSO-G44	R-PDSO-G44	R-PDSO-G48
memory density	2097152 bit	2097152 bit	2097152 bit	2097152 bit	2097152 bit	2097152 bit	2097152 bit	2097152 bit	2097152 bit	2097152 bit
Memory IC Type	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH
Number of departments/size	1,2,1,3	1,2,1,3	1,2,1,3	1,2,1,3	1,2,1,3	1,2,1,3	1,2,1,3	1,2,1,3	1,2,1,3	1,2,1,3
Number of terminals	48	48	44	48	48	48	48	44	44	48
word count	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words
character code	128000	128000	128000	128000	128000	128000	128000	128000	128000	128000
Maximum operating temperature	85 °C	70 °C	70 °C	70 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-40 °C	-20 °C	-20 °C	-20 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
organize	128KX16	128KX16	128KX16	128KX16	128KX16	128KX16	128KX16	128KX16	128KX16	128KX16
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSSOP	TSSOP	SOP	TSSOP	TSSOP	TSSOP	TSSOP	SOP	SOP	TSSOP
Encapsulate equivalent code	TSSOP48,.8,20	TSSOP48,.8,20	SOP44,.63	TSSOP48,.8,20	TSSOP48,.8,20	TSSOP48,.8,20	TSSOP48,.8,20	SOP44,.63	SOP44,.63	TSSOP48,.8,20
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
power supply	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
ready/busy	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
Department size	16K,8K,32K,64K	16K,8K,32K,64K	16K,8K,32K,64K	16K,8K,32K,64K	16K,8K,32K,64K	16K,8K,32K,64K	16K,8K,32K,64K	16K,8K,32K,64K	16K,8K,32K,64K	16K,8K,32K,64K
Maximum standby current	0.000005 A	0.000005 A	0.000005 A	0.000005 A	0.000005 A	0.000005 A	0.000005 A	0.000005 A	0.000005 A	0.000005 A
Maximum slew rate	0.05 mA	0.05 mA	0.05 mA	0.05 mA	0.05 mA	0.05 mA	0.05 mA	0.05 mA	0.05 mA	0.05 mA
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal pitch	0.5 mm	0.5 mm	1.27 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm	1.27 mm	1.27 mm	0.5 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
switch bit	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
type	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE

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